(Al Ga ) In P/In Ga As Heterostructure Doped-Channel FETs for Microwave Power Applications

TLDR: In this paper, the electrical properties of quaternary (Al Ga ) In P materials and concluded that the best position for improving the device performance is by substituting 30% of Ga atoms for Al atoms in GaInP material.

Abstract: The quaternary (Al Ga ) In P compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al Ga ) In P materials and concluded that the best com- position for improving the device performance is by substituting 30% of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights of (Al Ga ) In P layers were eV. We successfully realized the Therefore, in this study, we first systematically grew and characterized various (Al Ga ) In P qua- ternary compounds. The Schottky barrier height of these quaternary compounds were investigated. Secondly, in order to obtain a high-process uniformity, the reactive ion etching (RIE) technology was applied to characterize the etching properties of the AlGaInP materials. Finally, we used this high quality (Al Ga ) In P quaternary material system as a Schottky layer, combining a super transport In Ga As doped channel, to realize the (Al Ga ) In P/In Ga As double doped-channel FETs (DCFETs), and evaluated their dc and microwave power performances. DCFETs, based on our previous studies, have achieved excellent device linearity, current density, and breakdown voltage, as compared with PHEMTs, which are the important factors for device power applications (4).