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Jens H. Schmid

Researcher at National Research Council

Publications -  101
Citations -  5839

Jens H. Schmid is an academic researcher from National Research Council. The author has contributed to research in topics: Photonics & Metamaterial. The author has an hindex of 24, co-authored 69 publications receiving 4796 citations. Previous affiliations of Jens H. Schmid include University of British Columbia.

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Broadband polarization independent nanophotonic coupler for silicon waveguides with ultra-high efficiency.

TL;DR: A subwavelength refractive index engineered nanostructure is demonstrated to mitigate loss and wavelength resonances by suppressing diffraction effects, enabling a coupling efficiency over 92% (0.32 dB) and polarization independent operation for a broad spectral range exceeding 100 nm.
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Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response

TL;DR: A new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescence field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide is demonstrated with near temperature-independent response.
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Silicon Photonic Integration Platform—Have We Found the Sweet Spot?

TL;DR: In this article, the role of silicon device layer thickness in design optimization of various components that need to be integrated in a typical optical transceiver, including both passive ones for routing, wavelength selection, and light coupling as well as active ones such as monolithic modulators and on-chip lasers produced by hybrid integration.
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Continuously apodized fiber-to-chip surface grating coupler with refractive index engineered subwavelength structure

TL;DR: A fully etched, continuously apodized fiber-to-chip surface grating coupler for the first time (to the authors' knowledge), fabricated in a single-etch step and operates with TM-polarized light.
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Evanescent field waveguide sensing with subwavelength grating structures in silicon-on-insulator.

TL;DR: It is shown that by subwavelength patterning of silicon-wire waveguides the field delocalization can be engineered to increase the sensitivity, achieving sensitivities of 0.83 RIU/RIU and 1.5·10(-3)‬ RIU/nm for bulk and surface sensing.