J
Jian Liu
Researcher at Nanjing University
Publications - 17
Citations - 342
Jian Liu is an academic researcher from Nanjing University. The author has contributed to research in topics: Dangling bond & Memristor. The author has an hindex of 7, co-authored 17 publications receiving 129 citations. Previous affiliations of Jian Liu include China University of Technology.
Papers
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Journal ArticleDOI
Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor
Chenyu Wang,Shi-Jun Liang,Shuang Wang,Pengfei Wang,Zhuan Li,Zhongrui Wang,Anyuan Gao,Chen Pan,Chuan Liu,Jian Liu,Huafeng Yang,Xiaowei Liu,Wenhao Song,Cong Wang,Bin Cheng,Xiaomu Wang,Kunji Chen,Zhenlin Wang,Kenji Watanabe,Takashi Taniguchi,Jianhua Yang,Feng Miao +21 more
TL;DR: In this article, the authors demonstrate a vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures.
Journal ArticleDOI
Networking retinomorphic sensor with memristive crossbar for brain-inspired visual perception.
Shuang Wang,Chenyu Wang,Pengfei Wang,Cong Wang,Zhuan Li,Chen Pan,Yitong Dai,Anyuan Gao,Chuan Liu,Jian Liu,Huafeng Yang,Xiaowei Liu,Bin Cheng,Kunji Chen,Zhenlin Wang,Kenji Watanabe,Takashi Taniguchi,Shi-Jun Liang,Feng Miao +18 more
TL;DR: A prototype neuromorphic vision system is proposed and demonstrated by networking a retinomorphic sensor with a memristive crossbar that allows for fast letter recognition and object tracking and indicates the capabilities of image sensing, processing and recognition in the full analog regime.
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Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation.
TL;DR: The AlOx-based resistive switching memory device is fabricated by an oxidation diffusion process that involves depositing an Al film on an ITO substrate and annealing at 400 °C in a vacuum, which suggests that Joule heating is essential for the unipolar RS behaviour.
Journal ArticleDOI
An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics.
Jian Liu,Huafeng Yang,Yang Ji,Zhongyuan Ma,Kunji Chen,Xinxin Zhang,Hui Zhang,Yang Sun,Xinfan Huang,Shunri Oda +9 more
TL;DR: The capability of continuous modulation conductance (synaptic weight) in the Ti/HfO2/TiOx/Pt memristor was investigated and the potentiation and depression characteristics of the synaptic weight could be precisely tuned by the number or amplitude of the input pulse-train.
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Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure
TL;DR: In this paper, the authors reported an Al2O3/HfO2/Al 2O3 sandwich structure resistive switching device with significant improvement of multilevel cell operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the reset stop voltages (V Reset-stop) during the reset operation.