J
Jiandong Ye
Researcher at Nanjing University
Publications - 359
Citations - 6658
Jiandong Ye is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemistry & Chemical vapor deposition. The author has an hindex of 32, co-authored 280 publications receiving 4471 citations. Previous affiliations of Jiandong Ye include Singapore Science Park & Australian National University.
Papers
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Review of gallium-oxide-based solar-blind ultraviolet photodetectors
TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
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Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions
TL;DR: In this paper, the authors show that the visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction, where the tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space charge-limited current conduction dominated the carrier transport at higher bias.
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Correlation between green luminescence and morphology evolution of ZnO films
Jiandong Ye,S.L. Gu,Feng Qin,Shunming Zhu,S.M. Liu,Xin Zhou,Wei Liu,Liqun Hu,R. Zhang,Y. Shi,Y.D. Zheng +10 more
TL;DR: In this article, the surface morphology with different grain structures has been used to characterize the green photoluminescence of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures.
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Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique
Wei Liu,S.L. Gu,Jiandong Ye,Shunming Zhu,S. M. Liu,Xin Zhou,R. Zhang,Yumeng Shi,Y.D. Zheng,Y. Hang,Chuanwei Zhang +10 more
TL;DR: In this paper, the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZNO bulk substrate was reported.
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Solar-blind Photodetector with High Avalanche Gains and Bias-tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures
Xuanhu Chen,Yang Xu,Dong Zhou,Sen Yang,Fang-Fang Ren,Hai Lu,Kun Tang,Shulin Gu,Rong Zhang,Youdou Zheng,Jiandong Ye +10 more
TL;DR: Single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated, holding promise for developing high performance solar-blind photodetectors.