Jiandong Ye

TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.

TL;DR: In this paper, the authors show that the visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction, where the tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space charge-limited current conduction dominated the carrier transport at higher bias.

TL;DR: In this article, the surface morphology with different grain structures has been used to characterize the green photoluminescence of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures.

TL;DR: In this paper, the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZNO bulk substrate was reported.

TL;DR: Single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated, holding promise for developing high performance solar-blind photodetectors.