J
Jinho Jeong
Researcher at Sogang University
Publications - 87
Citations - 1736
Jinho Jeong is an academic researcher from Sogang University. The author has contributed to research in topics: Amplifier & RF power amplifier. The author has an hindex of 19, co-authored 87 publications receiving 1576 citations. Previous affiliations of Jinho Jeong include University of California & University of California, San Diego.
Papers
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Journal ArticleDOI
High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs
Donald F. Kimball,Jinho Jeong,Chin Hsia,Paul Draxler,Sandro Lanfranco,W. Nagy,K. Linthicum,Lawrence E. Larson,Peter M. Asbeck +8 more
TL;DR: In this paper, a high-efficiency wideband code-division multiple access (W-CDMA) base station amplifier is presented using high-performance GaN heterostructure field effect transistors to achieve high gain and efficiency with good linearity.
Journal ArticleDOI
A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS
TL;DR: In this article, a single-stage stacked field effect transistor (FET) linear power amplifier (PA) was demonstrated using 0.28-?m 2.5-V standard I/O FETs in a 0.13-?m silicon-on-insulator (SOI) CMOS technology.
Journal ArticleDOI
Range-Adaptive Wireless Power Transfer Using Multiloop and Tunable Matching Techniques
Jungsik Kim,Jinho Jeong +1 more
TL;DR: A multiloop topology is employed to greatly reduce the variation in the input impedance of the WPT system with respect to the distance, where one of the four loops with a different size is selected, depending on the distance.
Proceedings ArticleDOI
High Efficiency Envelope Tracking LDMOS Power Amplifier for W-CDMA
Paul Draxler,Sandro Lanfranco,Donald F. Kimball,Chin Hsia,Jinho Jeong,J. van de Sluis,Peter M. Asbeck +6 more
TL;DR: In this paper, a high performance WCDMA base station power amplifier is presented, which uses an envelope tracking bias system along with an advanced 0.4mum gate length LDMOS transistor, to achieve high efficiency.
Journal ArticleDOI
A 20 dBm Linear RF Power Amplifier Using Stacked Silicon-on-Sapphire MOSFETs
TL;DR: In this article, a fully integrated 20-dBm RF power amplifier (PA) is presented using 0.25mum-gate silicon-on-sapphire metaloxide-semiconductor field effect transistors (MOSFETs).