Jochen Rentsch

TL;DR: In this article, highly negatively charged aluminum oxide layers were produced using an inline plasma-enhanced chemical vapor deposition system, leading to very low effective recombination velocities (∼10 cm)s−1) on low resistivity p-type substrates.

TL;DR: In this article, the ozone-based oxide layers were applied to the electron-selective contact (n-TOPCon) on planar and textured surfaces, and the oxide properties as stoichiometry and layer thickness were analyzed by means of X-ray photoelectron spectroscopy (XPS), spectral ellipsometry (SE) and transmission electron microscopy (TEM).

TL;DR: In this paper, ultrathin (7 nm) atomic layer deposited Al2O3 layers and highdeposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells.

TL;DR: In this paper, the applicability of three methods to clean and condition the surface of silicon wafers by an ultra-thin oxide layer were tested: two UV/O 3 sources (an Hg vapor lamp and a high efficiency excimer module) as well as a wet chemical oxidation in HNO 3.

TL;DR: In this paper, Fraunhofer ISE used a low-temperature passivation stack of hydrogenated amorphous silicon and plasma-enhanced chemical vapor deposition (PECVD) silicon oxide to achieve an efficiency of up to 21.7%.