J
Joonsuk Kim
Researcher at Samsung
Publications - 106
Citations - 2468
Joonsuk Kim is an academic researcher from Samsung. The author has contributed to research in topics: MIMO & Beamforming. The author has an hindex of 27, co-authored 104 publications receiving 2445 citations. Previous affiliations of Joonsuk Kim include Broadcom & Avago Technologies.
Papers
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Patent
Channel characterization and training within multiple user, multiple access, and/or MIMO wireless communications
TL;DR: In this article, a multi-cast sounding frame is transmitted from a transmitting device to a number of receiving devices to provide channel characterization and training for multiple user, multiple access, and/or MIMO wireless communications.
Patent
Group identification and definition within multiple user, multiple access, and/or mimo wireless communications
Joonsuk Kim,Matthew James Fischer,Peiman Amini,Joseph Paul Lauer,Vinko Erceg,Carlos Horacio Aldana,Eric Ojard,Sirikiat Ariyavisitakul +7 more
TL;DR: Group identification and definition within multiple user, multiple access, and/or MIMO wireless communications are discussed in this article, where a group identification definition field may be transmitted to a number of receiving devices for use in interpreting current or subsequently received packets that include a group ID.
Proceedings ArticleDOI
The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond
Joonsuk Kim,Chang-Sub Lee,S. Kim,I.B. Chung,Yong-lack Choi,Byung-lyul Park,J.W. Lee,D.I. Kim,Young-Nam Hwang,D.S. Hwang,H.K. Hwang,Jong Moon Park,D.H. Kim,N.J. Kang,Mann Ho Cho,Myung Yung Jeong,Hoonki Kim,Jung-In Han,S.Y. Kim,Byeong Yun Nam,Hyun-Mog Park,S.H. Chung,J. H. Lee,Jintaek Park,H.S. Kim,Yang-Keun Park,K. Kim +26 more
TL;DR: In this paper, a Recess-Channel-Array-Transistor (RCAT) with 88 nm feature size has been developed for DRAM with a gate length of 75 nm and channel depth of 150 nm.
Proceedings ArticleDOI
Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers
Tai-su Park,S. Choi,Deok-Hyung Lee,Jae-Yoon Yoo,Byeong Chan Lee,Joonsuk Kim,Chang-Bum Lee,K.K. Chi,Soo-jin Hong,S.J. Hynn,Yu-gyun Shin,Jung-In Han,I.S. Park,U-In Chung,Joo Tae Moon,Euijoon Yoon,Jong-Ho Lee +16 more
TL;DR: The Omega MOSFET as discussed by the authors has a very low subthreshold swing, Drain Induced Barrier Lowering (DIBL) of 24 mV/V, almost no body bias effect, and orders of magnitude lower I/sub SUB/I/sub D/ than planar type DRAM cell transistors.
Patent
Distributed signal field for communications within multiple user, multiple access, and/or MIMO wireless communications
TL;DR: In this article, a distributed signal field for communications within multiple user, multiple access, and/or MIMO wireless communications is defined, where a signal field employed within such packets is distributed or partitioned into at least two separate signal fields (e.g., SIG A and SIG B) that are located in different portions of the packet.