http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

The authors discuss high-voltage power conversion. Conventional series connection and three-level voltage source inverter techniques are reviewed and compared. A novel versatile multilevel commutation cell is introduced: it is shown that this topology is safer and more simple to control, and delivers purer output waveforms. The authors show how this technique can be applied to either choppers or voltage-source inverters and generalized to any number of switches.<<ETX>>

Multi-level conversion : high voltage choppers and voltage-source inverters

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

https://ieeexplore.ieee.org/ielaam/41/8031005/7815312-aam.pdf

Review of Silicon Carbide Power Devices and Their Applications

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic $R_{\mathrm {{ds}},\mathrm {{on}}}$ , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

En el siglo XXI, en un escenario de transformacion de la cultura, del trabajo y el ocio y de necesaria vigencia del paradigma de la sostenibilidad, el turismo constituye un factor conformador de la nueva sociedad y del modelo territorial. El escenario de cambio requiere conocimiento para la compresion de los procesos de produccion y de consumo turisticos y para orientar la gestion territorial del turismo. Esta obra aporta respuestas a dichas necesidades. En ella se abordan los fundamentos del tursimo, la conceptualizacion de la dimension territorial y de su articulacion territorial y, por ultimo, la formalizacion de los procesos de ordenacion, planificacion y gestion de areas y destinos turisticos, destacando la sistematizacion de las herramientas para llevar a cabo dichos procesos, lo que supone, a la vez, una expresion del caracter aplicado de la geografia del turismo.

Análisis territorial del turismo y planificación de destinos turísticos

A large number of factors such as the increasingly stringent pollutant emission policies, fossil fuel scarcity and their price volatility have increased the interest towards the partial or total electrification of current vehicular technologies. These transition of the vehicle fleet into electric is being carried out progressively. In the last decades, several technological milestones have been achieved, which range from the development of basic components to the current integrated electric drives made of silicon (Si) based power modules. In this context, the automotive industry and political and social agents are forcing the current technology of electric drives to its limits. For example, the U.S Department of Energy’s goals for 2020 include the development of power converter technologies with power densities higher than 14.1 kW/kg and efficiencies greater than 98%. Additionally, target price of power converters has been set below $3.3/kW. Thus, these goals could be only achieved by using advanced semiconductor technologies. Wide-bandgap (WBG) semiconductors, and, most notably, silicon carbide (SiC) based power electronic devices, have been proposed as the most promising alternative to Si devices due to their superior material properties. As the power module is one of the most significant component of the traction power converter, this work focuses on an in-deep review of the state of the art concerning such element, identifying the electrical requirements for the modules and the power conversion topologies that will best suit future drives. Additionally, current WBG technology is reviewed and, after a market analysis, the most suitable power semiconductor devices are highlighted. Finally, this work focuses on practical design aspects of the module, such as the layout of the module and optimum WBG based die parallelization, placement and Direct Bonded Copper (DBC) routing.

Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

This paper studies the overload turnoff failure in the insulated-gate bipolar transistor (IGBT) devices of power multichip modules for railway traction. After a detailed experimental analysis carried out through a dedicated test circuit, electrothermal simulations at device level are also presented. The simulation strategy has consisted in inducing a current and temperature mismatch in two IGBT cells. Results show that mismatches in the electrothermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure and reducing the lifetime of the power module. Concretely, simulations qualitatively demonstrate that localized hot-spot formation due to a dynamic breakdown could lead to a second breakdown mechanism.

Jose Rebollo

Papers

A Survey of Wide Bandgap Power Semiconductor Devices

Análisis territorial del turismo y planificación de destinos turísticos

Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions