Justin Iveland

TL;DR: The droop phenomenon in GaN light-emitting diodes originates from the excitation of Auger processes, which shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process.

TL;DR: In this article , the authors report the measurement of logical qubit performance scaling across several code sizes, and demonstrate that their system of superconducting qubits has sufficient performance to overcome the additional errors from increasing qubit number.

TL;DR: It is shown that both from the point of view of cost of ownership and carbon emissions reduction, the relevant metric is efficiency, more than the cost of lumens, which requires identification of the loss mechanisms in light emission from LEDs.

TL;DR: Using non-c-plane bulk GaN substrates, the authors demonstrate continuous-wave singlemode blue-emitting laser diodes operating with over 23% wall plug efficiency and over 750 mW output power, which represent the highest values reported to date.

TL;DR: In this article, the position of the first satellite valley in wurtzite GaN is directly determined by nearband-gap photoemission spectroscopy of $p$-doped GaN activated to negative electron affinity.