H
H. Kawasaki
Researcher at Toshiba
Publications - 32
Citations - 1241
H. Kawasaki is an academic researcher from Toshiba. The author has contributed to research in topics: MOSFET & Layer (electronics). The author has an hindex of 17, co-authored 32 publications receiving 1200 citations. Previous affiliations of H. Kawasaki include IBM.
Papers
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Proceedings ArticleDOI
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
H. Kawasaki,Veeraraghavan S. Basker,Tenko Yamashita,C-H. Lin,Yu Zhu,J. Faltermeier,Stefan Schmitz,Jason E. Cummings,S. Kanakasabapathy,H. Adhikari,Hemanth Jagannathan,Amit Kumar,Kingsuk Maitra,Junli Wang,C.-C. Yeh,Chao Wang,Marwan H. Khater,Michael A. Guillorn,Nicholas C. M. Fuller,Josephine B. Chang,Leland Chang,Ramachandran Muralidhar,Atsushi Yagishita,Robert J. Miller,Q.C. Ouyang,Y. Zhang,Vamsi Paruchuri,Huiming Bu,Bruce B. Doris,Mariko Takayanagi,Wilfried Haensch,D. McHerron,James A. O’Neill,Kazunari Ishimaru +33 more
TL;DR: FinFET integration challenges and solutions are discussed for the 22 nm node and beyond and Diamond-shaped epi growth for the raised source-drain is proposed to improve parasitic resistance degraded by 3-D structure with thin Si-body.
Proceedings ArticleDOI
Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length
K. Okano,Takashi Izumida,H. Kawasaki,Akio Kaneko,Atsushi Yagishita,Takahisa Kanemura,Masaki Kondo,Sanae Ito,Nobutoshi Aoki,Kiyotaka Miyano,T. Ono,K. Yahashi,K. Iwade,T. Kubota,T. Matsushita,Ichiro Mizushima,Satoshi Inaba,Kazunari Ishimaru,K. Suguro,Kazuhiro Eguchi,Y. Tsunashima,Hidemi Ishiuchi +21 more
TL;DR: In this article, a CMOS FinFET fabricated on bulk Si substrate is discussed from the viewpoint of device size scalability and short channel effect control, and a trimming technique by special oxidation was applied to reduce fin width down to sub-10 nm regime.
Proceedings ArticleDOI
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
Akio Kaneko,Atsushi Yagishita,K. Yahashi,T. Kubota,M. Omura,K. Matsuo,Ichiro Mizushima,K. Okano,H. Kawasaki,Takashi Izumida,Takahisa Kanemura,Nobutoshi Aoki,A. Kinoshita,Junji Koga,Satoshi Inaba,Kazunari Ishimaru,Yoshiaki Toyoshima,Hidemi Ishiuchi,K. Suguro,Kazuhiro Eguchi,Y. Tsunashima +20 more
TL;DR: In this article, a DS-Schottky S/D CMOS-FinFET with dopant-segregated Schottky source/drain was demonstrated.
Proceedings ArticleDOI
FinFET performance advantage at 22nm: An AC perspective
Michael A. Guillorn,Josephine B. Chang,A. Bryant,Nicholas C. M. Fuller,Omer H. Dokumaci,X. Wang,J. Newbury,Katherina Babich,John A. Ott,Balasubramanian S. Pranatharthi Haran,R.R. Yu,Christian Lavoie,D. Klaus,Y. Zhang,E. Sikorski,W. Graham,B. To,Michael F. Lofaro,James A. Tornello,Dinesh Koli,Bin Yang,A. Pyzyna,D. Neumeyer,Marwan H. Khater,Atsushi Yagishita,H. Kawasaki,Wilfried Haensch +26 more
TL;DR: In this article, the authors estimate that superior electrostatics and reduced junction capacitance in FinFETs may provide a 13~23% reduction in delay relative to planar FETs.
Proceedings ArticleDOI
A 0.063 µm 2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
V. Basker,Theodorus E. Standaert,H. Kawasaki,C.-C. Yeh,Kingsuk Maitra,Tenko Yamashita,J. Faltermeier,H. Adhikari,Hemanth Jagannathan,Junli Wang,Hiroshi Sunamura,S. Kanakasabapathy,Stefan Schmitz,Jason E. Cummings,Atsuro Inada,Chung Hsun Lin,Pranita Kulkarni,Yu Zhu,J. Kuss,T. Yamamoto,Amit Kumar,Jeremy A. Wahl,Atsushi Yagishita,Lisa F. Edge,R. H. Kim,Erin Mclellan,S. Holmes,R. C. Johnson,T. Levin,James J. Demarest,Masami Hane,Mariko Takayanagi,Matthew E. Colburn,Vamsi Paruchuri,R. J. Miller,Huiming Bu,Bruce B. Doris,D. McHerron,Effendi Leobandung,James A. O’Neill +39 more
TL;DR: In this paper, the smallest FinFET SRAM cell size of 0.063 µm2 has been achieved using optical lithography using a double-expose, double-etch (DE2) sidewall image transfer (SIT) process.