Toyota Morimoto

TL;DR: In this article, a nickel-monosilicide (NiSi) technology suitable for a deep sub-micron CMOS process has been developed, and it has been confirmed that a nickel film sputtered onto n/sup ± and p/sup +/- single-silicon and polysilicon substrates is uniformly converted into NiSi, without agglomeration, by lowtemperature (400-600/spl deg/C) rapid thermal annealing.

TL;DR: In this paper, the relationship between sheet resistance and line width is characterized by three distinct regions according to the value of W. The abrupt increase in sheet resistance observed in the region W/spl les/0.2 /spl mu/m cannot be explained in terms of the phase transition from C54 to C49, which is the cause of the rising resistance at larger W.

TL;DR: In this paper, the uniformity, reliability, and dopant penetration of 1.5-nm direct-tunneling gate oxide MOSFETs were investigated for the first time.

TL;DR: In this paper, a charge pumping method is proposed for direct measurement of the hot-carrier-induced fixed charge near the drain junction of p-MOSFETs by holding the rising and falling slopes of the gate pulse constant and then varying the highest and lowest levels.

TL;DR: In this article, the high-frequency AC characteristics of 1.5 nm direct-tuning gate oxide MOSFET's were shown for the first time, and very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m due to the high transconductance.