The market for driver assistance systems based on millimeter-wave radar sensor technology is gaining momentum. In the near future, the full range of newly introduced car models will be equipped with radar based systems which leads to high volume production with low cost potential. This paper provides background and an overview of the state of the art of millimeter-wave technology for automotive radar applications, including two actual silicon based fully integrated radar chips. Several advanced packaging concepts and antenna systems are presented and discussed in detail. Finally measurement results of the fully integrated radar front ends are shown.

Millimeter-Wave Technology for Automotive Radar Sensors in the 77 GHz Frequency Band

This paper introduces floating shields for on-chip transmission lines, inductors, and transformers implemented in production silicon CMOS or BiCMOS technologies. The shield minimizes losses without requiring an explicit on-chip ground connection. Experimental measurements demonstrate Q-factor ranging from 25 to 35 between 15 and 40 GHz for shielded coplanar waveguide fabricated on 10 /spl Omega//spl middot/cm silicon. This is more than a factor of 2 improvement over conventional on-chip transmission lines (e.g., microstrip, CPW). A floating-shielded, differentially driven 7.4-nH inductor demonstrates a peak Q of 32, which is 35% higher than an unshielded example. Similar results are realizable for on-chip transformers. Floating-shielded bond-pads with 15% less parasitic capacitance and over 60% higher shunt equivalent resistance compared to conventional shielded bondpads are also described. Implementation of floating shields is compatible with current and projected design constraints for production deep-submicron silicon technologies without process modifications. Application examples of floating-shielded passives implemented in a 0.18-/spl mu/m SiGe-BiCMOS are presented, including a 21-26-GHz power amplifier with 23-dBm output at 20% PAE (at 22 GHz), and a 17-GHz WLAN image-reject receiver MMIC which dissipates less than 65 mW from a 2-V supply.

Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits

"Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military, specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation at very high temperatures (e.g., to 200/spl deg/C or even 300/spl deg/C), and operation in a radiation-rich environment (e.g., space). We argue that the unique bandgap-engineered features of silicon-germanium heterojunction bipolar transistors offer great potential to simultaneously satisfy all three extreme environment applications, potentially with little or no process modification, ultimately providing compelling cost advantages at the IC and system level.

On the Potential of SiGe HBTs for Extreme Environment Electronics

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-/spl mu/m silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-/spl mu/m CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications.

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Integrated Phased Array Systems in Silicon

A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Through-wafer interconnects for photoimager and memory wafers

This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.

SiGe HBTs with cut-off frequency of 350 GHz

Transmission lines are implemented using an all-copper backend developed for RF and microwave applications. Wavelength reduction is used to achieve a Q factor >20 from 20GHz to 40GHz, about three times higher than conventional transmission lines implemented with the same technology. It has 0.3dB/mm loss, and reduces the wavelength of a conventional transmission line by half thereby minimizing the space for on-chip microwave devices.

On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction

Differential shielding reduces substrate losses and improves the Q-factor of a monolithic inductor on silicon by up to 35% without process modification or a patterned ground shield. Peak Qs of 32 for 4 /spl mu/m thick aluminum and 28 for 2.3 /spl mu/m thick copper metals are demonstrated on 10 /spl Omega/-cm substrates for a 7.7 nH test inductor. The differential shield fulfills all existing metal density requirements, and a compact circuit model is presented that agrees within 8% of measurement.

K. Vaed

Papers

SiGe HBTs with cut-off frequency of 350 GHz

On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction

Differentially-shielded monolithic inductors