Proceedings ArticleDOI
SiGe HBTs with cut-off frequency of 350 GHz
Jae-Sung Rieh,Basanth Jagannathan,H. Chen,Kathryn T. Schonenberg,David Angell,Anil K. Chinthakindi,John E. Florkey,F. Golan,David R. Greenberg,S.-J. Jeng,Marwan H. Khater,Francois Pagette,Christopher M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,K. Vaed,Richard P. Volant,David C. Ahlgren,Gregory G. Freeman,K. Stein,Seshadri Subbanna +20 more
- pp 771-774
Reads0
Chats0
TLDR
In this paper, the SiGe HBTs with f/sub T/ of 350 GHz were reported, which is the highest reported f/Sub T/ for any Si-based transistor as well as any bipolar transistor.Abstract:
This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.read more
Citations
More filters
Journal ArticleDOI
Millimeter-Wave Technology for Automotive Radar Sensors in the 77 GHz Frequency Band
TL;DR: In this paper, the authors provide background and an overview of the state of the art of millimeter-wave technology for automotive radar applications, including two actual silicon based fully integrated radar chips.
Journal ArticleDOI
On the Potential of SiGe HBTs for Extreme Environment Electronics
TL;DR: It is argued that the unique bandgap-engineered features of silicon-germanium heterojunction bipolar transistors offer great potential to simultaneously satisfy all three extreme environment applications, potentially with little or no process modification, ultimately providing compelling cost advantages at the IC and system level.
Proceedings ArticleDOI
SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps
Marwan H. Khater,Jae-Sung Rieh,Thomas N. Adam,Anil K. Chinthakindi,J. Johnson,Rajendran Krishnasamy,Mounir Meghelli,F. Pagette,D. Sanderson,Christopher M. Schnabel,Kathryn T. Schonenberg,P. Smith,K. Stein,A. Strieker,Shwu-Jen Jeng,David C. Ahlgren,Gregory G. Freeman +16 more
TL;DR: In this article, the SiGe HBT technology with f/sub max/ and F/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 33 ps is reported.
Journal ArticleDOI
Radiation Effects in SiGe Technology
TL;DR: An overview of silicon-Germanium technology is given, focusing primarily on the intersection of SiGe HBTs, and circuits built from them, with radiation-intense environments such as space.
Journal ArticleDOI
Half-terahertz operation of SiGe HBTs
R. Krithivasan,Yuan Lu,John D. Cressler,Jae-Sung Rieh,Marwan H. Khater,David C. Ahlgren,Gregory G. Freeman +6 more
TL;DR: In this paper, the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency was presented.
References
More filters
Proceedings ArticleDOI
Physical limitations on frequency and power parameters of transistors
TL;DR: In this article, a simple analysis showed that the ultimate performance limits of a transistor are set by the product Ev_{s}/2\pi, where E is the semiconductor's dielectric breakdown strength and v is its minority carrier saturated drift velocity.
Journal ArticleDOI
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Basanth Jagannathan,Marwan H. Khater,Francois Pagette,Jae-Sung Rieh,David Angell,H. Chen,John E. Florkey,F. Golan,David R. Greenberg,R.A. Groves,S.-J. Jeng,J. Johnson,E. Mengistu,Kathryn T. Schonenberg,C.M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +20 more
TL;DR: In this paper, a SiGe NPN HBT with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz was reported.
Journal ArticleDOI
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
S.-J. Jeng,Basanth Jagannathan,Jae-Sung Rieh,J. Johnson,Kathryn T. Schonenberg,David R. Greenberg,Andreas D. Stricker,H. Chen,Marwan H. Khater,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +12 more
TL;DR: In this paper, a 210 GHz f/sub T/SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/spl mu/m/sup 2/ is fabricated with a new non-self-aligned (NSA) structure based on 0.18 /spl µ/m technology.
Proceedings ArticleDOI
Ultra high speed SiGe NPN for advanced BiCMOS technology
Marco Racanelli,Klaus F. Schuegraf,Amol Kalburge,A. Kar-Roy,B. Shen,Chenming Hu,D. Chapek,D. Howard,D. Quon,F. Wang,G. U'ren,L. Lao,H. Tu,J. Zheng,Jinshu Zhang,K. Bell,K. Yin,P. Joshi,S. Akhtar,S. Vo,T. Lee,W. Shi,P. Kempf +22 more
TL;DR: In this paper, a scalable SiGe NPN demonstrating peak Ft*BVceo product of 340 GHz-V with Ft of 170 GHz and BVCEo of 20 V together with Fmax of 160 GHz is presented at a relatively low current density of 6 mA/spl mu/m/sup 2/
Journal ArticleDOI
40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology
Gregory G. Freeman,Mounir Meghelli,Young H. Kwark,Steven J. Zier,Alexander V. Rylyakov,M.A. Sorna,T. Tanji,O. Schreiber,K. Walter,Jae-Sung Rieh,Basanth Jagannathan,Alvin J. Joseph,Seshadri Subbanna +12 more
TL;DR: In this paper, the authors demonstrate the high-speed performance of a 40-Gb/s SiGe HBT with a 4: 1 multiplexer and a 1 : 4 demultiplexer running over 50 Gb/s error free at a -3.3V power supply.
Related Papers (5)
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Basanth Jagannathan,Marwan H. Khater,Francois Pagette,Jae-Sung Rieh,David Angell,H. Chen,John E. Florkey,F. Golan,David R. Greenberg,R.A. Groves,S.-J. Jeng,J. Johnson,E. Mengistu,Kathryn T. Schonenberg,C.M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +20 more
A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
Alvin J. Joseph,Douglas D. Coolbaugh,Michael J. Zierak,Ryan Wayne Wuthrich,Peter J. Geiss,Z.X. He,Xuefeng Liu,Bradley A. Orner,Jeffrey B. Johnson,Gregory G. Freeman,David C. Ahlgren,Basanth Jagannathan,Louis D. Lanzerotti,Vidhya Ramachandran,J. Malinowski,H. Chen,Jack O. Chu,Peter B. Gray,R. Johnson,J. Dunn,S. Subbanna,Kathryn T. Schonenberg,David Harame,Robert A. Groves,K. Watson,D. Jadus,Mounir Meghelli,Alexander V. Rylyakov +27 more