J
John E. Florkey
Researcher at IBM
Publications - 14
Citations - 707
John E. Florkey is an academic researcher from IBM. The author has contributed to research in topics: Shielded cable & RFIC. The author has an hindex of 10, co-authored 14 publications receiving 702 citations.
Papers
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Journal ArticleDOI
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Basanth Jagannathan,Marwan H. Khater,Francois Pagette,Jae-Sung Rieh,David Angell,H. Chen,John E. Florkey,F. Golan,David R. Greenberg,R.A. Groves,S.-J. Jeng,J. Johnson,E. Mengistu,Kathryn T. Schonenberg,C.M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +20 more
TL;DR: In this paper, a SiGe NPN HBT with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz was reported.
Proceedings ArticleDOI
SiGe HBTs with cut-off frequency of 350 GHz
Jae-Sung Rieh,Basanth Jagannathan,H. Chen,Kathryn T. Schonenberg,David Angell,Anil K. Chinthakindi,John E. Florkey,F. Golan,David R. Greenberg,S.-J. Jeng,Marwan H. Khater,Francois Pagette,Christopher M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,K. Vaed,Richard P. Volant,David C. Ahlgren,Gregory G. Freeman,K. Stein,Seshadri Subbanna +20 more
TL;DR: In this paper, the SiGe HBTs with f/sub T/ of 350 GHz were reported, which is the highest reported f/Sub T/ for any Si-based transistor as well as any bipolar transistor.
Proceedings ArticleDOI
RFCMOS technology from 0.25/spl mu/m to 65nm: the state of the art
John J. Pekarik,David R. Greenberg,Basanth Jagannathan,R. Groves,J.R. Jones,Raminderpal Singh,Anil K. Chinthakindi,X. Wang,Matthew J. Breitwisch,Douglas D. Coolbaugh,P. Cottrell,John E. Florkey,Gregory G. Freeman,Rajendran Krishnasamy +13 more
TL;DR: This work discusses some of the challenges of implementing RF designs in CMOS, focusing on those introduced by the changing properties of FETs as technology nodes scale and devices shrink.
Proceedings ArticleDOI
Differentially-shielded monolithic inductors
T.S.D. Cheung,J.R. Long,K. Vaed,R. Volant,Anil K. Chinthakindi,Christopher M. Schnabel,John E. Florkey,Z.X. He,Kenneth J. Stein +8 more
TL;DR: The differential shield fulfills all existing metal density requirements, and a compact circuit model is presented that agrees within 8% of measurement.
Proceedings ArticleDOI
SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz
Jae-Sung Rieh,David R. Greenberg,Marwan H. Khater,Kathryn T. Schonenberg,S.-J. Jeng,F. Pagette,Thomas N. Adam,Anil K. Chinthakindi,John E. Florkey,Basanth Jagannathan,J. Johnson,Rajendran Krishnasamy,D. Sanderson,Christopher M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,S. Sweeney,Kunal Vaed,T. Yanagisawa,David C. Ahlgren,K. Stein,Gregory G. Freeman +21 more
TL;DR: In this paper, a SiGe HBT with simultaneously optimized f/sub T/ and F/sub max/ of >300 GHz was developed, with peak current gain of 660.