K. Wada

TL;DR: In this paper, high quality Ge epilayers were epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition followed by cyclic thermal annealing, and the beneficial effect of the post-growth thermal anealing on the electrical properties of the epilayer was confirmed by the dramatic enhancement of the performance of the photodetectors.

TL;DR: In this article, the authors investigated the emission mechanisms of a device-quality quantum well (QW) structure and bulk three dimensional (3D) InGaN materials grown on sapphire substrates without any epitaxial lateral overgrown GaN base layers.

TL;DR: In this paper, the emission mechanisms of strained InGaN quantum wells (QWs) were shown to vary depending on the well thickness L and InN molar fraction x, where Si-doping was found to improve the interface quality and surface morphology, resulting in an efficient carrier transfer from high to low bandgap energy portions of the well.

TL;DR: In this paper, the authors investigated the importance of localized QW excitons in their spontaneous emission mechanisms and verified the real-space variation of the luminescence peak energy by the spatially resolved monochromatic cathodoluminescence mapping method.

TL;DR: In this article, the importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane.