This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on the read and write performances of a STT-MRAM based cache rather than the obvious advantages such as the denser bit-cell and zero static power. An accurate MTJ macromodel capturing key MTJ properties was adopted for efficient Monte Carlo simulations. For the simulation of access devices and peripheral circuitries, ITRS projected transistor parameters were utilized and calibrated using the MASTAR tool that has been widely used in industry. 6T SRAM and STT-MRAM arrays were implemented with aggressive assist schemes to mimic industrial memory designs. A constant JC0·RA/VDD scaling scenario was used which to the first order gives the optimal balance between read and write margins of STT-MRAMs. The thermal stability factor ensuring a 10 year retention time was obtained by adjusting the free layer thickness as well as assuming improvement in the crystalline anisotropy. Our studies based on the proposed scaling methodology show that in-plane STT-MRAM will outperform SRAM from 15 nm node, while its perpendicular counterpart requires further innovations in MTJ material in order to overcome the poor write performance scaling from 22 nm node onwards.

A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory

The Power7 is IBM's first eight-core processor, with each core capable of four-way simultaneous-multithreading operation. Its key architectural features include an advanced memory hierarchy with three levels of on-chip cache; embedded-DRAM devices used in the highest level of the cache; and a new memory interface. This balanced multicore design scales from 1 to 32 sockets in commercial and scientific environments.

Power7: IBM's Next-Generation Server Processor

Technology advancements have enabled the integration of large on-die embedded DRAM (eDRAM) caches. eDRAM is significantly denser than traditional SRAMs, but must be periodically refreshed to retain data. Like SRAM, eDRAM is susceptible to device variations, which play a role in determining refresh time for eDRAM cells. Refresh power potentially represents a large fraction of overall system power, particularly during low-power states when the CPU is idle. Future designs need to reduce cache power without incurring the high cost of flushing cache data when entering low-power states. In this paper, we show the significant impact of variations on refresh time and cache power consumption for large eDRAM caches. We propose Hi-ECC, a technique that incorporates multi-bit error-correcting codes to significantly reduce refresh rate. Multi-bit error-correcting codes usually have a complex decoder design and high storage cost. Hi-ECC avoids the decoder complexity by using strong ECC codes to identify and disable sections of the cache with multi-bit failures, while providing efficient single-bit error correction for the common case. Hi-ECC includes additional optimizations that allow us to amortize the storage cost of the code over large data words, providing the benefit of multi-bit correction at same storage cost as a single-bit error-correcting (SECDED) code (2% overhead). Our proposal achieves a 93% reduction in refresh power vs. a baseline eDRAM cache without error correcting capability, and a 66% reduction in refresh power vs. a system using SECDED codes.

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Reducing cache power with low-cost, multi-bit error-correcting codes

The POWER7 processor is the newest member of the IBM POWER® family of server processors. With greater than 4X the peak performance and the same power budget as the previous generation POWER6®, POWER7 will deliver impressive energy-efficiency boosts. The improved peak energy-efficiency is accompanied by a wide array of new features in the processor and system designs that advance IBM's EnergyScale™ dynamic power management methodology. This paper provides an overview of these new features, which include better sensing, more advanced power controls, improved scalability for power management, and features to address the diverse needs of the full range of POWER servers from blades to supercomputers. We also highlight three challenges that need attention from a range of systems design and research teams: (i) power management in highly virtualized environments, (ii) power (in)efficiency of systems software and applications, and (iii) memory power costs, especially for servers with large memory footprints.

Architecting for power management: The IBM® POWER7™ approach

The continuous drive for performance has pushed the researchers to explore novel memory technologies (e.g. non-volatile memory) and novel fabrication approaches (e.g. 3D stacking) in the design of caches. However, a comprehensive tool which models both conventional and emerging memory technologies for both 2D and 3D designs has been lacking. We present DESTINY, a microarchitecture-level tool for modeling 3D (and 2D) cache designs using SRAM, embedded DRAM (eDRAM), spin transfer torque RAM (STT-RAM), resistive RAM (ReRAM) and phase change RAM (PCM). DESTINY facilitates design-space exploration across several dimensions, such as optimizing for a target (e.g. latency or area) for a given memory technology, choosing the suitable memory technology or fabrication method (i.e. 2D v/s 3D) for a desired optimization target etc. DESTINY has been validated against industrial cache prototypes. We believe that DESTINY will drive architecture and system-level studies and will be useful for researchers and designers.

DESTINY: a tool for modeling emerging 3D NVM and eDRAM caches

A prototype SOI embedded DRAM macro is developed for high-performance microprocessors and introduces performance-enhancing 3T micro sense amplifier architecture (muSA). The macro was characterized via a test chip fabricated in a 65nm SOI deep-trench DRAM process. Measurements confirm 1.5ns random access time with a 1V supply at 85deg and low voltage operation with a 600mV supply.

A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier

As microprocessors enter the highly multi-core/multi-threaded era, higher density, lower latency embedded memory will be required to meet cache design needs. This paper describes a 500 MHz random cycle silicon on insulator (SOI) embedded DRAM macro which features a three-transistor micro sense amplifier, realizing significant performance gains over traditional array design methods. To address the realities of process integration, we describe the features and issues associated with integrating this DRAM into SOI technology, including deep trench processing and floating body effects. After a brief description of the macro architecture, details are provided on the three-transistor micro sense amplifier scheme, which is key to achieving a high transfer ratio with minimal area overhead. The paper concludes with hardware results and a summary.

K. Yanagisawa

Papers

A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier

A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier