S
S. S. Iyer
Researcher at IBM
Publications - 33
Citations - 716
S. S. Iyer is an academic researcher from IBM. The author has contributed to research in topics: Silicon & Molecular beam epitaxy. The author has an hindex of 15, co-authored 33 publications receiving 715 citations.
Papers
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Proceedings ArticleDOI
A Compact eFUSE Programmable Array Memory for SOI CMOS
John M. Safran,Alan J. Leslie,Gregory J. Fredeman,Chandrasekharan Kothandaraman,Alberto Cestero,Xiang Chen,R. Rajeevakumar,Deok-kee Kim,Yan Zun Li,Dan Moy,Norman Robson,T. Kirihata,S. S. Iyer +12 more
TL;DR: A compact eFUSE programmable array memory configured as a 4 Kb one-time programmable ROM (OTPROM) is presented, demonstrating a >10X density increase over traditional VLSI fuse circuits.
Journal ArticleDOI
Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys
TL;DR: In this paper, the evolution of interfacial reactions during the deposition of Pt and Pd on epitaxial Si1−xGex alloys was studied using x-ray photoelectron spectroscopy (XPS) for metal coverage up to 10 A.
Proceedings ArticleDOI
Reliability investigation of NiPtSi electrical fuse with different programming mechanisms
C. E. Tian,Dan Moy,Chuck Le,B. Messenger,Chandrasekharan Kothandaraman,John M. Safran,Stephen Wu,Norman Robson,S. S. Iyer +8 more
TL;DR: In this article, the reliability of NiPtSi/p-poly Si electrical fuses with different programming mechanisms, i.e., electromigration and thermal rupture, was investigated in terms of fuse resistance stability and fuse array functionality for the 65-nm technology node.
Proceedings ArticleDOI
A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier
John E. Barth,William Robert Reohr,Paul C. Parries,Gregory J. Fredeman,John W. Golz,Stanley E. Schuster,Richard E. Matick,Hillery C. Hunter,C. Tanner,J. Harig,Hyun-Chul Kim,Babar A. Khan,J. Griesemer,R.P. Havreluk,K. Yanagisawa,T. Kirihata,S. S. Iyer +16 more
TL;DR: A prototype SOI embedded DRAM macro is developed for high-performance microprocessors and introduces performance-enhancing 3T micro sense amplifier architecture (muSA), which confirms 1.5ns random access time with a 1V supply at 85deg and low voltage operation with a 600mV supply.