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Kang Xu

Researcher at Hong Kong Polytechnic University

Publications -  9
Citations -  951

Kang Xu is an academic researcher from Hong Kong Polytechnic University. The author has contributed to research in topics: Semiconductor & Doping. The author has an hindex of 6, co-authored 9 publications receiving 669 citations.

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High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

TL;DR: The electrical and optical measurements show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 and the high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make Pt Se2 a versatile electronic2D layered material.
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Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

TL;DR: In this paper, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD-based field effect transistors is provided.
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Graphene-Draped Semiconductors for Enhanced Photocorrosion Resistance and Photocatalytic Properties.

TL;DR: Graphene-draping strategy for antiphotocorrosion of semiconductor photocatalysts is environmentally friendly as it prevents them from entering into the surrounding environment, thus eliminating the possible secondary pollution.
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Modulation doping of transition metal dichalcogenide/oxide heterostructures

TL;DR: In this paper, the authors investigated the layer-dependent negative trion PL of 2D MoS2, and further constructed heterostructures with transition metal dichalcogenides and transition metal oxides (TMOs).
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Discovering the forbidden Raman modes at the edges of layered materials.

TL;DR: The Raman spectra of the edges feature newly observed forbidden Raman modes, which are originally undetectable from the body region, by selecting the edge type and the polarization directions of the incident and scattered light.