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Zhihao Yu

Researcher at Nanjing University

Publications -  169
Citations -  5558

Zhihao Yu is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemistry & Catalysis. The author has an hindex of 28, co-authored 131 publications receiving 3711 citations. Previous affiliations of Zhihao Yu include Dalian University of Technology & University of Nottingham.

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Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

TL;DR: A facile low-temperature thiol chemistry route is developed to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps, providing a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.
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High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

TL;DR: The electrical and optical measurements show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 and the high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make Pt Se2 a versatile electronic2D layered material.
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The link between immigration and trade: Evidence from the United Kingdom

TL;DR: The authors investigated the link between immigration and trade using recent UK data and found that immigration from non-Commonwealth countries is shown to have a significant export-enhancing effect, whereas immigration from the Commonwealth countries is found to have no substantial impact on exports.
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A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

TL;DR: The first multi‐functional synaptic transistor based on a molybdenum disulfide (MoS2)/perylene‐3,4,9,10‐tetracarboxylic dianhydride (PTCDA) hybrid heterojunction, with remarkable short‐term plasticity (STP) and long‐term Plasticity (LTP), is reported.
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Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2 Field-Effect Transistors

TL;DR: In this paper, a theoretical model that quantitatively captures the scaling of mobility with temperature, carrier density, and thickness of transition metal dichalcogenides (TMDCs) is introduced.