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Kibong Moon

Researcher at Pohang University of Science and Technology

Publications -  43
Citations -  2444

Kibong Moon is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: Neuromorphic engineering & Resistive random-access memory. The author has an hindex of 20, co-authored 42 publications receiving 1731 citations.

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Hardware implementation of associative memory characteristics with analogue-type resistive-switching device.

TL;DR: By adopting complementary metal-oxide-semiconductor devices as neurons and TiN/PCMO devices as synapses, neuromorphic hardware that mimics associative memory characteristics in real time for the first time is implemented.
Proceedings ArticleDOI

Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs

TL;DR: Large arrays of the same nonvolatile memories being developed for Storage-Class Memory (SCM) - such as Phase Change Memory and Resistance RAM - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic “weight.”
Proceedings ArticleDOI

High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron

TL;DR: In this article, a novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system was reported. And the NbO2-based IMT oscillator was developed for neuron application.
Proceedings ArticleDOI

Monolithic integration of AgTe/TiO 2 based threshold switching device with TiN liner for steep slope field-effect transistors

TL;DR: In this paper, an AgTe/TiN/TiO 2 /TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep sub-5mV/dec subthreshold slope field effect transistors.
Journal ArticleDOI

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

TL;DR: In this paper, an optimized pulse shape was proposed to minimize the current overshoot and was experimentally verified to significantly improve the variability and endurance in a typical RRAM device with a W/Zr/ ${\rm HfO}_{2}$ /TiN structure.