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Severin Sidler

Researcher at IBM

Publications -  16
Citations -  2598

Severin Sidler is an academic researcher from IBM. The author has contributed to research in topics: Neuromorphic engineering & Artificial neural network. The author has an hindex of 9, co-authored 16 publications receiving 1972 citations. Previous affiliations of Severin Sidler include École Polytechnique Fédérale de Lausanne.

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Journal ArticleDOI

Neuromorphic computing using non-volatile memory

TL;DR: The relevant virtues and limitations of these devices are assessed, in terms of properties such as conductance dynamic range, (non)linearity and (a)symmetry of conductance response, retention, endurance, required switching power, and device variability.
Journal ArticleDOI

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

TL;DR: Using 2 phase-change memory devices per synapse, a 3-layer perceptron network is trained on a subset of the MNIST database of handwritten digits using a backpropagation variant suitable for NVM+selector crossbar arrays, obtaining a training (generalization) accuracy of 82.2%.
Journal ArticleDOI

Equivalent-accuracy accelerated neural-network training using analogue memory

TL;DR: Mixed hardware–software neural-network implementations that involve up to 204,900 synapses and that combine long-term storage in phase-change memory, near-linear updates of volatile capacitors and weight-data transfer with ‘polarity inversion’ to cancel out inherent device-to-device variations are demonstrated.
Proceedings ArticleDOI

Large-scale neural networks implemented with non-volatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power)

TL;DR: It is shown that NVM-based systems could potentially offer faster and lower-power ML training than GPU-based hardware, despite the inherent random and deterministic imperfections of such devices.
Journal ArticleDOI

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr 0.7 Ca 0.3 MnO 3 Material Improvements and Device Measurements

TL;DR: Improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as bidirectional analog synapses for on-chip acceleration of the backpropagation algorithm.