K
Kibong Moon
Researcher at Pohang University of Science and Technology
Publications - 43
Citations - 2444
Kibong Moon is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: Neuromorphic engineering & Resistive random-access memory. The author has an hindex of 20, co-authored 42 publications receiving 1731 citations.
Papers
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Journal ArticleDOI
NbO 2 -Based Frequency Storable Coupled Oscillators for Associative Memory Application
Donguk Lee,Euijun Cha,Jaehyuk Park,Changhyuck Sung,Kibong Moon,Solomon Amsalu Chekol,Hyunsang Hwang +6 more
TL;DR: In this article, a frequency storable oscillator using nanoscale two-terminal NbO2 insulator-metal transition devices along with TaOx-based resistive switching memory (RRAM) devices is demonstrated.
Journal ArticleDOI
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr 0.7 Ca 0.3 MnO 3 Device Characteristics on Neural Network Training Accuracy
Alessandro Fumarola,Severin Sidler,Kibong Moon,Junwoo Jang,Robert M. Shelby,Pritish Narayanan,Yusuf Leblebici,Hyunsang Hwang,Geoffrey W. Burr +8 more
TL;DR: This work simulates the effects of their nonlinear conductance response on the training of a three-layer fully connected neural network and shows that the bidirectional programming of Al/Mo/PCMO can be used to implement high-density neuromorphic systems with a single conductance per synapse, at only a slight degradation to accuracy.
Journal ArticleDOI
Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering
Sangheon Lee,Daeseok Lee,Jiyong Woo,Euijun Cha,Jaesung Park,Jeonghwan Song,Kibong Moon,Yunmo Koo,Behnoush Attari,Nusrat Tamanna,Misha Saiful Haque,Hyunsang Hwang +11 more
TL;DR: In this article, the effects of stack and defect engineering of metaloxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability.
Proceedings ArticleDOI
Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta 2 O 5 /TaO x /TiO 2 /TiN) with excellent performance (J MAX > 10 7 A/cm 2 )
Jiyong Woo,Jeonghwan Song,Kibong Moon,Ji-Hyun Lee,Euijun Cha,Amit Prakash,Daeseok Lee,Sangheon Lee,Jaesung Park,Yunmo Koo,Chan Gyung Park,Hyunsang Hwang +11 more
TL;DR: In this article, the effect of intrinsic/extrinsic factors such as scaling (area and thickness), and parasitic components were systemically investigated in a fully CMOS compatible stack with extremely thin oxide layer.
Proceedings ArticleDOI
ReRAM-based analog synapse and IMT neuron device for neuromorphic system
TL;DR: In this paper, a nanoscale oxide based analog synpase device and an insulator-metal transition (IMT) oscillator neuron device for neuromorphic system was proposed.