Klaus Aufinger

TL;DR: In this article, a radar system with an ultra-wide FMCW ramp bandwidth of 25.6 GHz around a center frequency of 80 GHz is presented, which is based on a monostatic fully integrated SiGe transceiver chip, and stabilized using conventional fractional-N PLL chips at a reference frequency of 100 MHz.

TL;DR: In this paper, a SiGe bipolar technology for automotive radar applications around 77 GHz has been developed and a cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 35 ps have been obtained.

TL;DR: In this paper, a fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented, with a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply.

TL;DR: In this paper, the authors describe the development activities within the European funding project DOTSEVEN done by Infineon and IHP and demonstrate the suitability of IHP´s advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms.

TL;DR: The basic reasons for the limitation of the tuning range in millimeter-wave VCOs are shown and the improvement by using two (instead of one) varactor pairs is demonstrated.