D
D. Schmidt
Researcher at Leibniz Institute for Neurobiology
Publications - 18
Citations - 579
D. Schmidt is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: CMOS & BiCMOS. The author has an hindex of 12, co-authored 18 publications receiving 557 citations.
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Proceedings ArticleDOI
Novel collector design for high-speed SiGe:C HBTs
Bernd Heinemann,Holger Rucker,R. Barth,J. Bauer,D. Bolze,E. Bugiel,J. Drews,K.E. Ehwald,Thomas Grabolla,U. Haak,W. Hoppner,D. Knoll,D. Krüger,B. Kuck,R. Kurps,M. Marschmeyer,H.H. Richter,Peter Schley,D. Schmidt,R. Scholz,Bernd Tillack,Wolfgang Winkler,D. Wolnsky,H.-E. Wulf,Yuji Yamamoto,Peter Zaumseil +25 more
TL;DR: In this paper, a collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation was described.
Proceedings ArticleDOI
SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
Josef Bock,Klaus Aufinger,Sabine Boguth,Claus Dahl,Herbert Knapp,Wolfgang Liebl,Dirk Manger,Thomas Meister,Andreas Pribil,Jonas Wursthorn,Rudolf Lachner,Bernd Heinemann,Holger Rucker,A. Fox,R. Barth,Georg Fischer,Steffen Marschmeyer,D. Schmidt,Andreas Trusch,C. Wipf +19 more
TL;DR: In this paper, the authors describe the development activities within the European funding project DOTSEVEN done by Infineon and IHP and demonstrate the suitability of IHP´s advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms.
Proceedings ArticleDOI
A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,J. Drews,G. G. Fischer,A. Fox,Thomas Grabolla,U. Haak,D. Knoll,F. Korndorfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,D. Schmidt,J. Schmidt,K. Schulz,Bernd Tillack,D. Wolansky,Yuji Yamamoto +20 more
TL;DR: In this paper, a 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented, which features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage high-frequency HBT (fT =50 GHz, F max =130 GHz, BS CEO =3.7V) integrated in a dual-gate, triple-well RF-CMOS process.
Proceedings ArticleDOI
A low-parasitic collector construction for high-speed SiGe:C HBTs
Bernd Heinemann,R. Barth,D. Bolze,J. Drews,P. Formanek,Thomas Grabolla,U. Haak,W. Hoppner,D.K. Kopke,B. Kuck,R. Kurps,Steffen Marschmeyer,H.H. Richter,Holger Rucker,Peter Schley,D. Schmidt,Wolfgang Winkler,D. Wolansky,H.-E. Wulf,Yuji Yamamoto +19 more
TL;DR: In this article, a new collector construction for high-speed SiGe:C HBTs was proposed that substantially reduces the parasitic base collector capacitance by selectively underetering of the collector region.
Proceedings ArticleDOI
A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs
Bernd Heinemann,R. Barth,D. Bolze,J. Drews,P. Formanek,O. Fursenko,M. Glante,K. Glowatzki,A. Gregor,U. Haak,W. Hoppner,D. Knoll,R. Kurps,Steffen Marschmeyer,S. Orlowski,Holger Rucker,Peter Schley,D. Schmidt,R. Scholz,Wolfgang Winkler,Yuji Yamamoto +20 more
TL;DR: SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f/sub T//f/sub max/ values of 80 GHz/120 GHz at BV/sub CEO/ = 26 V and a ring oscillator delay of 89 ps were demonstrated in this paper.