The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Lanthanide ions possess fascinating optical properties and their discovery, first industrial uses and present high technological applications are largely governed by their interaction with light. Lighting devices (economical luminescent lamps, light emitting diodes), television and computer displays, optical fibres, optical amplifiers, lasers, as well as responsive luminescent stains for biomedical analysis, medical diagnosis, and cell imaging rely heavily on lanthanide ions. This critical review has been tailored for a broad audience of chemists, biochemists and materials scientists; the basics of lanthanide photophysics are highlighted together with the synthetic strategies used to insert these ions into mono- and polymetallic molecular edifices. Recent advances in NIR-emitting materials, including liquid crystals, and in the control of luminescent properties in polymetallic assemblies are also presented. (210 references.)

Taking advantage of luminescent lanthanide ions

Recent startling interest for lanthanide luminescence is stimulated by the continuously expanding need for luminescent materials meeting the stringent requirements of telecommunication, lighting, electroluminescent devices, (bio-)analytical sensors and bio-imaging set-ups. This critical review describes the latest developments in (i) the sensitization of near-infrared luminescence, (ii) “soft” luminescent materials (liquid crystals, ionic liquids, ionogels), (iii) electroluminescent materials for organic light emitting diodes, with emphasis on white light generation, and (iv) applications in luminescent bio-sensing and bio-imaging based on time-resolved detection and multiphoton excitation (500 references).

/pdf/lanthanide-luminescence-for-functional-materials-and-bio-1w9cppwf8r.pdf

Lanthanide luminescence for functional materials and bio-sciences

The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

The structural and luminescence properties of porous silicon

Emission characteristics of ADN derivatives

Angular dependence of the emission from low Q-factor organic microcavity light emitting diodes

Multilayer superlens has been reported that it had advantages over the single metal layer superlens. In this work, single silver layer and Ag-SiO2 multilayer superlens devices working at wavelength of 365 nm were fabricated using standard photolithography method. Grating objects with line/space (190 nm/190 nm) resolution could be resolved through both kinds of lens structures with working distance up to 128 nm. However, Ag-SiO2 multilayer lens shows higher transmittance and image contrast than the single silver layer device, the experimental result proves the theoretical calculation.

Near field imaging from multilayer lens

Yi Jiang Hong Kong Baptist University Qi Wei University of Macau https://orcid.org/0000-0002-5322-3692 King Fai Li Hong Kong Baptist University Mingke Jin Southern University of Science and Technology Hoi Lam Tam Hong Kong Baptist University Guixin Li Southern University of Science and Technology https://orcid.org/0000-0001-9689-8705 Guichuan Xing University of Macau Kok Wai Cheah (  kwcheah@hkbu.edu.hk ) Hong Kong Baptist University https://orcid.org/0000-0002-5226-2040

/pdf/transcending-the-gain-bandwidth-limitation-in-semiconductors-oo2qkzqj2q.pdf

Kok Wai Cheah

Papers

Emission characteristics of ADN derivatives

Angular dependence of the emission from low Q-factor organic microcavity light emitting diodes

Near field imaging from multilayer lens

Transcending the gain bandwidth limitation in semiconductors for full-colour-tunable lasers

Doping of Porous Silicon with Terbium Organic Complex