K
Kok Wai Cheah
Researcher at Hong Kong Baptist University
Publications - 273
Citations - 11751
Kok Wai Cheah is an academic researcher from Hong Kong Baptist University. The author has contributed to research in topics: Photoluminescence & OLED. The author has an hindex of 48, co-authored 270 publications receiving 10627 citations. Previous affiliations of Kok Wai Cheah include City University of Hong Kong & East China University of Science and Technology.
Papers
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Highly efficient white organic light-emitting diodes with single small molecular emitting material
TL;DR: In this paper, a white organic light emitting device with fluorescent small molecule 4,4′-bis(9-(1-naphthyl)anthracene-10-yl)biphenyl (BUBH-3) was demonstrated.
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Synthesis, characterization and near-infrared photoluminescent studies of diethyl malonate appended mono-porphyrinate lanthanide complexes
TL;DR: In this paper, a new unsymmetrical diethyl malonate appended porphyrin and its Yb3+, Er3+ and Nd3+ complexes were prepared and characterized by elemental analysis, NMR, IR, UV-visible and mass spectral methods.
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Synthesis, characterization, luminescence and nonlinear optical (NLO) properties of truxene-containing platinum(II) alkynyl complexes
Carmen Ka Man Chan,Chi Hang Tao,King Fai Li,Keith Man-Chung Wong,Nianyong Zhu,Kok Wai Cheah,Vivian Wing-Wah Yam +6 more
TL;DR: A series of luminescent trinuclear platinum(II) alkynyl complexes with dihydro-5H-diindeno[1,2-a;1′,2′-c] ligands with different electronic properties at the periphery has been successfully synthesized and characterized as discussed by the authors.
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Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane as p-type dopant
TL;DR: In this paper, the authors demonstrate that 3,6-difluoro-2,5,7, 7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV.
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Energy bands and acceptor binding energies of gan
TL;DR: In this paper, the binding energies of donor and acceptor states of zinc-blende and wurtzite GaN are calculated with the empirical pseudopotential method, and the pseudoprocessible parameters for Ga and N atoms are given.