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Kouta Kondou

Researcher at Global Alliance in Management Education

Publications -  81
Citations -  2879

Kouta Kondou is an academic researcher from Global Alliance in Management Education. The author has contributed to research in topics: Spin-½ & Magnetoresistance. The author has an hindex of 23, co-authored 71 publications receiving 2037 citations. Previous affiliations of Kouta Kondou include University of Tokyo & Kyoto University.

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Fermi-level-dependent charge-to-spin current conversion by Dirac surface states of topological insulators

TL;DR: In this paper, the spin-momentum locking of Dirac surface states offers intriguing possibilities for converting between charge and spin currents, and experiments show that fine tuning of the Fermi level is critical for maximizing the efficiency of such conversions.
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Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire

TL;DR: Evidence is given that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire, to achieve robust operation and low energy consumption in spintronic devices.
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Magnetic and magnetic inverse spin Hall effects in a non-collinear antiferromagnet

TL;DR: It is shown that antiferromagnets have richer spin Hall properties than do non-magnetic materials, and a magnetic contribution to the spin Hall effect is observed in the non-collinearantiferromagnet Mn3Sn, which is attributed to momentum-dependent spin splitting produced by non- Collinear magnetic order.
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Evaluation of spin Hall angle and spin diffusion length by using spin current-induced ferromagnetic resonance

TL;DR: In this paper, the thickness dependence of the spin current-induced ferromagnetic resonance in Ni80Fe20/nonmagnetic bilayer thin films has been investigated, showing that the spectrum shape depends on the Ni 80Fe20 layer thickness, due to extrinsic excitation in addition to spin Hall effect.
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Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator.

TL;DR: This method does not allow an accurate estimation of charge-spin conversion efficiency in TI and the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5×10^{10} A m^{-2}, showing its potential as a spintronic material.