K
Kristin De Meyer
Researcher at Katholieke Universiteit Leuven
Publications - 121
Citations - 2129
Kristin De Meyer is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: MOSFET & Field-effect transistor. The author has an hindex of 23, co-authored 121 publications receiving 1985 citations. Previous affiliations of Kristin De Meyer include IMEC.
Papers
More filters
Patent
Multiple gate semiconductor device and method for forming same
Abhisek Dixit,Kristin De Meyer +1 more
TL;DR: In this article, the dopant distribution in the semiconductor body of a multiple-gate semiconductor device has been studied and shown to vary from a low value near the surface of the body towards a higher value inside the body of the device.
Journal ArticleDOI
Vertical GAAFETs for the Ultimate CMOS Scaling
D. Yakimets,Geert Eneman,P. Schuddinck,Trong Huynh Bao,Marie Garcia Bardon,Praveen Raghavan,Anabela Veloso,Nadine Collaert,Abdelkarim Mercha,Diederik Verkest,Aaron Thean,Kristin De Meyer +11 more
TL;DR: It is demonstrated that FinFets fail to maintain the performance at scaled dimensions, while VFETs demonstrate good scalability and eventually outperform lateral devices both in speed and power consumption.
Patent
Integrated semiconductor fin device and a method for manufacturing such device
Nadine Collaert,Kristin De Meyer +1 more
TL;DR: In this paper, a CMOS circuit for and method of forming a FinFET device is described, which includes providing a substrate comprising a semiconductor layer, forming on the semiconductor layers active areas insulated from each other by field areas, forming at least one dummy gate on at least 1 active area and forming source and drain regions on the at least 2 active areas.
Journal ArticleDOI
Electrical TCAD Simulations of a Germanium pMOSFET Technology
Geert Hellings,Geert Eneman,Raymond Krom,B. De Jaeger,Jerome Mitard,An De Keersgieter,Thomas Hoffmann,Marc Meuris,Kristin De Meyer +8 more
TL;DR: In this paper, a commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs, and parameters for generation/recombination mechanisms (Shockley-Read-Hall, trap-assisted tunneling, and band-to-band tunneling) and mobility models (impurity scattering and mobility reduction at high lateral and transversal field) were provided.
Journal ArticleDOI
Through-Silicon-Via Capacitance Reduction Technique to Benefit 3-D IC Performance
TL;DR: In this paper, a method to exploit the TSV C-V behavior in a p-silicon substrate to achieve minimum TSV capacitance during 3-D circuit operation was proposed.