K
Kwang Hyeon Baik
Researcher at Hongik University
Publications - 111
Citations - 1884
Kwang Hyeon Baik is an academic researcher from Hongik University. The author has contributed to research in topics: Light-emitting diode & Schottky diode. The author has an hindex of 24, co-authored 108 publications receiving 1724 citations. Previous affiliations of Kwang Hyeon Baik include Samsung.
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Journal ArticleDOI
Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes
B. S. Kang,Suhyun Kim,Fan Ren,Jerry W. Johnson,Robert Joseph Therrien,Pradeep Rajagopal,John C. Roberts,Edwin L. Piner,Kevin J. Linthicum,S. N. G. Chu,Kwang Hyeon Baik,Brent P. Gila,C. R. Abernathy,Stephen J. Pearton +13 more
TL;DR: In this article, the changes in the conductance of the channel of a high electron mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in ambient pressure.
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Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
Byung Jae Kim,Chongmin Lee,Younghun Jung,Kwang Hyeon Baik,Michael A. Mastro,Jennifer K. Hite,Charles R. Eddy,Jihyun Kim +7 more
TL;DR: In this article, a few-layer graphene (FLG)-based transparent conductive electrode was used as a current spreading layer for GaN-based ultraviolet (UV) light-emitting diodes (LEDs).
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Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry
Hyun-Chul Kim,Kyoung-Kook Kim,Kwang Ki Choi,Hyung-Kun Kim,June O. Song,Jaehee Cho,Kwang Hyeon Baik,Cheolsoo Sone,Yongjo Park,Tae Yeon Seong +9 more
TL;DR: In this article, the authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes (LEDs) with vertical-injection geometry, based on the analyses of LED test patterns fabricated with various n-electrode dimensions.
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Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO
Kelly P. Ip,Young-Woo Heo,Kwang Hyeon Baik,David P. Norton,Stephen J. Pearton,Suhyun Kim,Jeffrey R. LaRoche,Fan Ren +7 more
TL;DR: The Schottky barrier height of Pt contacts on n-type (n∼1016 cm−3) thin film ZnO deposited by pulsed laser deposition was obtained from current-voltage measurements as a function of temperature as discussed by the authors.
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Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate
Sung-Min Hwang,Yong Gon Seo,Kwang Hyeon Baik,In Sung Cho,Jong Hyeob Baek,Sukkoo Jung,Tae Geun Kim,Meoungwhan Cho +7 more
TL;DR: In this paper, high crystalline a-plane (112¯0) GaN epitaxial layers with smooth surface morphology were grown on r-plane sapphire substrate by metalorganic chemical vapor deposition.