Kelly P. Ip

TL;DR: In this paper, the authors summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.

TL;DR: In this paper, the authors summarize recent progress in doping control, materials processing methods such as dry etching and ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition metal-doped ZnO.

TL;DR: A review of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices is given in this article.

TL;DR: In this article, hydrogen incorporation depths of >25μm were obtained in bulk, single-crystal ZnO during exposure to 2H plasmas for 0.5 h at 300°C, producing an estimated diffusivity of ∼8×10−10 cm2/V⋅s at this temperature.

TL;DR: Au and Ag Schottky contacts on the epiready (0001)Zn surface of bulk n-ZnO crystals show Schotty barrier heights of 0.65-0.70 eV from capacitance-voltage measurements, activation energies for reverse saturation currents of 0 3 −0.4 eV and saturation current densities ranging from 10−5 A cm−2 on surfaces etched in HCl to 8×10−7 A¾2 on solvent cleaned samples.