L
L. Tosti
Publications - 6
Citations - 449
L. Tosti is an academic researcher. The author has contributed to research in topics: Silicon on insulator & Transient (oscillation). The author has an hindex of 6, co-authored 6 publications receiving 433 citations.
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Journal ArticleDOI
Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs
V. Ferlet-Cavrois,P. Paillet,Marc Gaillardin,Damien Lambert,J. Baggio,J.R. Schwank,Gyorgy Vizkelethy,Marty R. Shaneyfelt,Kazuyuki Hirose,Ewart W. Blackmore,O. Faynot,C. Jahan,L. Tosti +12 more
TL;DR: In this paper, the authors measured the statistical transient response of floating body SOI and bulk devices under proton and heavy ion irradiation, and calculated the threshold and critical transient width for unattenuated propagation for both bulk and floating-body SOI as a function of technology scaling.
Journal ArticleDOI
Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices
V. Ferlet-Cavrois,P. Paillet,Dale McMorrow,A. Torres,Marc Gaillardin,Joseph S. Melinger,Alvin R. Knudson,A.B. Campbell,J.R. Schwank,G. Vizkelethy,Marty R. Shaneyfelt,Kazuyuki Hirose,O. Faynot,C. Jahan,L. Tosti +14 more
TL;DR: In this paper, the transient response of 50-nm gate length fully and partially depleted SOI and bulk devices to pulsed laser and heavy ion microbeam irradiations was investigated.
Journal ArticleDOI
Total ionizing dose effects on deca-nanometer fully depleted SOI devices
P. Paillet,Marc Gaillardin,V. Ferlet-Cavrois,A. Torres,O. Faynot,C. Jahan,L. Tosti,Sorin Cristoloveanu +7 more
TL;DR: In this article, total ionizing dose effects are investigated for the first time in deca-nanometer fully depleted (FD) silicon-on-insulator (SOI) devices.
Journal ArticleDOI
Charge enhancement effect in NMOS bulk transistors induced by heavy ion Irradiation-comparison with SOI
V. Ferlet-Cavrois,G. Vizkelethy,P. Paillet,A. Torres,J.R. Schwank,Marty R. Shaneyfelt,J. Baggio,Jd.P. de Pontcharra,L. Tosti +8 more
TL;DR: In this article, the authors investigated the charge collection mechanisms occurring in heavy ion irradiated metal oxide semiconductor (MOS) devices and showed that the drain junction of an OFF-state bulk MOS transistor collects more charge than an identical junction isolated from neighboring elements.
Journal ArticleDOI
Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation
Daniela Munteanu,V. Ferlet-Cavrois,J.L. Autran,P. Paillet,J. Baggio,Olivier Faynot,C. Jahan,L. Tosti +7 more
TL;DR: In this paper, the response to single event transient of decananometer SOI MOSFETs is investigated by heavy ion experiment and by 3D quantum simulation, and the effects of quantum-mechanical confinement on the operation of future ultra-thin single and double-gate devices submitted to heavy ion irradiation are investigated.