S
Sorin Cristoloveanu
Researcher at Los Angeles Harbor College
Publications - 694
Citations - 12077
Sorin Cristoloveanu is an academic researcher from Los Angeles Harbor College. The author has contributed to research in topics: Silicon on insulator & MOSFET. The author has an hindex of 48, co-authored 689 publications receiving 11384 citations. Previous affiliations of Sorin Cristoloveanu include Commissariat à l'énergie atomique et aux énergies alternatives & STMicroelectronics.
Papers
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Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
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Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
Book
Electrical Characterization of Silicon-on-Insulator Materials and Devices
Sorin Cristoloveanu,Sheng S. Li +1 more
Abstract: 1. Introduction. 2. Methods of Forming SOI Wafers. 3. SOI Devices. 4. Wafer Screening Techniques. 5. Transport Measurements. 6. SUS Capacitor Based Characterization Techniques. 7. Diode Measurements. 8. Transistor Characteristics. 9. Transistor Based Characterization Techniques. 10. Monitoring the Transistor Degradation. Index.
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Ultimately thin double-gate SOI MOSFETs
T. Ernst,Sorin Cristoloveanu,Gerard Ghibaudo,Thierry Ouisse,Seiji Horiguchi,Yukinori Ono,Yasuo Takahashi,Katsumi Murase +7 more
TL;DR: In this article, the operation of 1-3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate mode (for either front or back channel), is systematically analyzed.
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A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
TL;DR: In this article, the static and dynamic modes of operation as well as the main models and methods for electrical parameter extraction are presented in order to clarify the optimal conditions of operation and demonstrate the efficiency of the pseudo-MOS transistor technique for in situ characterization of SOI technologies and processes.