P
P. Paillet
Researcher at French Alternative Energies and Atomic Energy Commission
Publications - 150
Citations - 5087
P. Paillet is an academic researcher from French Alternative Energies and Atomic Energy Commission. The author has contributed to research in topics: Optical fiber & Irradiation. The author has an hindex of 36, co-authored 138 publications receiving 4606 citations.
Papers
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Journal ArticleDOI
Radiation Effects in MOS Oxides
J.R. Schwank,M.R. Shaneyfelt,Daniel M. Fleetwood,J.A. Felix,Paul E. Dodd,P. Paillet,V. Ferlet-Cavrois +6 more
TL;DR: In this paper, two primary types of radiation-induced charge are oxide-trapped charge and interface-trap charge, which can cause large radiationinduced threshold voltage shifts and increases in leakage currents.
Journal ArticleDOI
Radiation effects in SOI technologies
TL;DR: In this paper, the authors review the total dose, single-event effects, and dose rate hardness of silicon-on-insulator (SOI) devices and use body ties to reduce bipolar amplification.
Journal ArticleDOI
Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs
V. Ferlet-Cavrois,P. Paillet,Marc Gaillardin,Damien Lambert,J. Baggio,J.R. Schwank,Gyorgy Vizkelethy,Marty R. Shaneyfelt,Kazuyuki Hirose,Ewart W. Blackmore,O. Faynot,C. Jahan,L. Tosti +12 more
TL;DR: In this paper, the authors measured the statistical transient response of floating body SOI and bulk devices under proton and heavy ion irradiation, and calculated the threshold and critical transient width for unattenuated propagation for both bulk and floating-body SOI as a function of technology scaling.
Journal ArticleDOI
New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening
V. Ferlet-Cavrois,P. Paillet,Dale McMorrow,N. Fel,J. Baggio,Sylvain Girard,Olivier Duhamel,Joseph S. Melinger,Marc Gaillardin,J.R. Schwank,Paul E. Dodd,Marty R. Shaneyfelt,J.A. Felix +12 more
TL;DR: In this article, the generation and propagation of single event transients (SET) in SOI inverter chains with different designs is measured and modeled in a single-input single-output (SISO) system.
Journal ArticleDOI
Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains
V.F. Cavrois,Vincent Pouget,Dale McMorrow,J.R. Schwank,N. Fel,F. Essely,Richard S. Flores,P. Paillet,M. Gaillardin,Daisuke Kobayashi,Joseph S. Melinger,Olivier Duhamel,Paul E. Dodd,Marty R. Shaneyfelt +13 more
TL;DR: In this article, the propagation-induced pulse broadening (PIPB) effect is shown to determine the SET pulse width measured at the output of long chains of inverters after irradiation.