L
Lakhdar Dehimi
Researcher at University of Batna
Publications - 79
Citations - 761
Lakhdar Dehimi is an academic researcher from University of Batna. The author has contributed to research in topics: Diode & Schottky barrier. The author has an hindex of 15, co-authored 75 publications receiving 582 citations. Previous affiliations of Lakhdar Dehimi include University of Biskra.
Papers
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Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating
TL;DR: In this article, an analytical study of the impact of light trapping and multilayer antireflection coating (ARC) on the electrical characteristics of n(a-Si:H)/i(aSi: H)/p(c-Si)/p+(C-Si) heterojunction solar cells with intrinsic thin layer (SHJ) was presented.
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Combined optical-electrical modeling of perovskite solar cell with an optimized design
TL;DR: In this paper, an optimized design of n-i-p perovskite solar cell by means of combined optical and electrical approach is investigated. But the proposed approach is mainly based on Transfer Matrix Method (TMM) and SCAPS-1Dsimulator.
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Analysis of Trapping Effects on the Forward Current–Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes
M. Larbi Megherbi,Fortunato Pezzimenti,Lakhdar Dehimi,M. Achour Saadoune,Francesco G. Della Corte +4 more
TL;DR: In this paper, the forward currentvoltage characteristics of aluminum-implanted 4H-SiC p-i-n diodes are investigated by means of a numerical simulation study that takes into account both intrinsic and doping-induced deep defects, namely, the Z1/2 and EH6/7 centers inside the drift region and an electrically active trap concentration inside the anode region due to the Al+ ion implantation process.
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Performance Analysis of a Pt/n-GaN Schottky Barrier UV Detector
TL;DR: In this article, the electrical and optical properties of an n-type gallium nitride (GaN)-based Schottky barrier ultraviolet (UV) detector, where a platinum (Pt) metal layer forms the anode contact, have been evaluated by means of detailed numerical simulations considering a wide range of incident light intensities.
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Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode
F. Bouzid,Fortunato Pezzimenti,Lakhdar Dehimi,Lakhdar Dehimi,M.L. Megherbi,Francesco G. Della Corte +5 more
TL;DR: In this paper, the effect of different defect states within the n-GaN bulk with different densities and spatial locations is considered, and the authors show that the diode ideality factor and threshold voltage decrease with increasing temperature, while at the same time, the zero-bias Schottky barrier height (Φb0) extracted from the forward current density-voltage (J-V) characteristics increases.