Lakhdar Dehimi

TL;DR: In this article, an analytical study of the impact of light trapping and multilayer antireflection coating (ARC) on the electrical characteristics of n(a-Si:H)/i(aSi: H)/p(c-Si)/p+(C-Si) heterojunction solar cells with intrinsic thin layer (SHJ) was presented.

TL;DR: In this paper, an optimized design of n-i-p perovskite solar cell by means of combined optical and electrical approach is investigated. But the proposed approach is mainly based on Transfer Matrix Method (TMM) and SCAPS-1Dsimulator.

TL;DR: In this paper, the forward currentvoltage characteristics of aluminum-implanted 4H-SiC p-i-n diodes are investigated by means of a numerical simulation study that takes into account both intrinsic and doping-induced deep defects, namely, the Z1/2 and EH6/7 centers inside the drift region and an electrically active trap concentration inside the anode region due to the Al+ ion implantation process.

TL;DR: In this article, the electrical and optical properties of an n-type gallium nitride (GaN)-based Schottky barrier ultraviolet (UV) detector, where a platinum (Pt) metal layer forms the anode contact, have been evaluated by means of detailed numerical simulations considering a wide range of incident light intensities.

TL;DR: In this paper, the effect of different defect states within the n-GaN bulk with different densities and spatial locations is considered, and the authors show that the diode ideality factor and threshold voltage decrease with increasing temperature, while at the same time, the zero-bias Schottky barrier height (Φb0) extracted from the forward current density-voltage (J-V) characteristics increases.