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Leandro Julian Mele

Researcher at University of Udine

Publications -  11
Citations -  40

Leandro Julian Mele is an academic researcher from University of Udine. The author has contributed to research in topics: ISFET & Computer science. The author has an hindex of 3, co-authored 6 publications receiving 19 citations.

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Journal ArticleDOI

General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

TL;DR: A general methodology to calculate the individual sensitivity and the cross-sensitivities of potentiometric sensor devices with an arbitrary number of non-interacting receptors binding to ionic species or analytes in the electrolyte is proposed.
Journal ArticleDOI

Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications.

TL;DR: This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings.
Journal ArticleDOI

General Model and Equivalent Circuit for the Chemical Noise Spectrum Associated to Surface Charge Fluctuation in Potentiometric Sensors

TL;DR: In this article, the spectral density of the surface charge fluctuations, so-called chemical noise, from a generic set of reactions at the sensing surface of potentiometric sensors such as, for instance, Ion-Sensitive Field Effect Transistors (ISFETs), is derived.
Proceedings ArticleDOI

Modeling Selectivity and Cross-sensitivity in membrane-based potentiometric sensors

TL;DR: In this paper, a steady state model for ion selective membranes (ISM) as selectivity element in potentiometric sensors is proposed, coupled with distributed chemical reactions between ionophores and two types of competing ions.
Proceedings ArticleDOI

A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs

TL;DR: In this article, a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions is presented.