L
Lisen Huang
Researcher at Agency for Science, Technology and Research
Publications - 27
Citations - 800
Lisen Huang is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Coercivity & Skyrmion. The author has an hindex of 11, co-authored 24 publications receiving 694 citations. Previous affiliations of Lisen Huang include National University of Singapore.
Papers
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Journal ArticleDOI
Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction
Zhiqi Liu,Changjian Li,W. M. Lü,Xiaohu Huang,Zhen Huang,Shengwei Zeng,Xuepeng Qiu,Lisen Huang,Anil Annadi,Jingsheng Chen,J. M. D. Coey,Thirumalai Venkatesan,Ariando +12 more
TL;DR: In this paper, a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures was conducted.
Journal ArticleDOI
Origin of the Two-Dimensional Electron Gas at LaAlO 3 /SrTiO 3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction
Zhiqi Liu,Changjian Li,W. M. Lü,Xiaohu Huang,Zhen Huang,Shengwei Zeng,Xuepeng Qiu,Lisen Huang,Anil Annadi,Jingsheng Chen,J. M. D. Coey,J. M. D. Coey,Thirumalai Venkatesan,Ariando +13 more
TL;DR: In this article, the electrical properties of amorphous and crystalline LaAlO/SrTiO heterostructures were compared and it was shown that the answer depends on the structure of the overlayer.
Journal ArticleDOI
Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering
Changjian Li,Lisen Huang,Tao Li,Weiming Lü,Xuepeng Qiu,Zhen Huang,Zhiqi Liu,Shengwei Zeng,Rui Guo,Y. L. Zhao,Kaiyang Zeng,Michael Coey,Michael Coey,Jingsheng Chen,Ariando,Thirumalai Venkatesan +15 more
TL;DR: An incisive study of FTJ performance with varying asymmetry of the electrode/ferroelectric interfaces is reported and it is found that the off state resistance (R(Off)) increases much more rapidly with the number of interfaces compared to the on state Resistance (ROn).
Journal ArticleDOI
Functional ferroelectric tunnel junctions on silicon
R. Guo,Zhe Wang,Shengwei Zeng,Kun Han,Lisen Huang,Darrell G. Schlom,Thirumalai Venkatesan,Ariando,Jingsheng Chen +8 more
TL;DR: The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.
Journal ArticleDOI
Critical Fe thickness for effective coercivity reduction in FePt/Fe exchange-coupled bilayer
TL;DR: In this article, an Fe thickness of 3 nm was found to be the critical point where the coercivity reduction became saturated and had the largest thermal stability gain factor of 2.25.