S
Shengwei Zeng
Researcher at National University of Singapore
Publications - 92
Citations - 2380
Shengwei Zeng is an academic researcher from National University of Singapore. The author has contributed to research in topics: Magnetoresistance & Hall effect. The author has an hindex of 23, co-authored 78 publications receiving 1821 citations. Previous affiliations of Shengwei Zeng include Xiamen University.
Papers
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Journal ArticleDOI
Phase Diagram and Superconducting Dome of Infinite-Layer Nd 1 -x Sr x NiO 2 Thin Films
Shengwei Zeng,Chi Sin Tang,Xinmao Yin,Changjian Li,Mengsha Li,Zhen Huang,Junxiong Hu,Wei Liu,Ganesh Ji Omar,Hariom Jani,Zhi Shiuh Lim,Kun Han,Dongyang Wan,Ping Yang,Stephen J. Pennycook,Andrew T. S. Wee,Ariando Ariando +16 more
TL;DR: The temperature of the sign changes decreases monotonically with decreasing x from the overdoped side and approaches the superconducting dome at the midpoint, suggesting a reconstruction of the Fermi surface with the dopant concentration across the dome.
Journal ArticleDOI
Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction
Zhiqi Liu,Changjian Li,W. M. Lü,Xiaohu Huang,Zhen Huang,Shengwei Zeng,Xuepeng Qiu,Lisen Huang,Anil Annadi,Jingsheng Chen,J. M. D. Coey,Thirumalai Venkatesan,Ariando +12 more
TL;DR: In this paper, a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures was conducted.
Journal ArticleDOI
Origin of the Two-Dimensional Electron Gas at LaAlO 3 /SrTiO 3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction
Zhiqi Liu,Changjian Li,W. M. Lü,Xiaohu Huang,Zhen Huang,Shengwei Zeng,Xuepeng Qiu,Lisen Huang,Anil Annadi,Jingsheng Chen,J. M. D. Coey,J. M. D. Coey,Thirumalai Venkatesan,Ariando +13 more
TL;DR: In this article, the electrical properties of amorphous and crystalline LaAlO/SrTiO heterostructures were compared and it was shown that the answer depends on the structure of the overlayer.
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Metal-insulator transition in SrTiO(3-x) thin films induced by frozen-out carriers.
Zhiqi Liu,D. P. Leusink,D. P. Leusink,Xiang-Bin Wang,W. M. Lü,Kalon Gopinadhan,Anil Annadi,Y. L. Zhao,Xiaohu Huang,Shengwei Zeng,Zhen Huang,Amar Srivastava,Sankar Dhar,Thirumalai Venkatesan,Ariando +14 more
TL;DR: The metal-insulator transition (MIT) observed in the SrTiO(3-x) film was found to be induced by the carrier freeze-out effect and its electrical properties were found that O(vac) in bulk SrTi olefins is far from uniform over the whole material.
Journal ArticleDOI
Anisotropic two-dimensional electron gas at the LaAlO3/SrTiO3 (110) interface
Anil Annadi,Qinfang Zhang,X. Renshaw Wang,Nikolina Tuzla,Kalon Gopinadhan,W. M. Lü,A. Roy Barman,Zhiqi Liu,Amar Srivastava,Surajit Saha,Yongqian Zhao,Shengwei Zeng,Sankar Dhar,Eva Olsson,Bo Gu,Seiji Yunoki,Sadamichi Maekawa,Hans Hilgenkamp,Hans Hilgenkamp,Thirumalai Venkatesan,Ariando +20 more
TL;DR: In this paper, the authors reported the observation of unexpected conductivity at the LaAlO3/SrTiO3 interface prepared on (110)-oriented SrTiO 3, with a LaO3-layer thickness-dependent metal-insulator transition.