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Anil Annadi

Researcher at National University of Singapore

Publications -  65
Citations -  2143

Anil Annadi is an academic researcher from National University of Singapore. The author has contributed to research in topics: Thin film & Magnetoresistance. The author has an hindex of 22, co-authored 60 publications receiving 1845 citations. Previous affiliations of Anil Annadi include University of Pittsburgh & École Centrale Paris.

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Electronic phase separation at the LaAlO3/SrTiO3 interface

TL;DR: An EPS state is reported at the LaAlO(3)/SrTiO (3) interface, where the interface charges are separated into regions of a quasi-two-dimensional electron gas, a ferromagnetic phase, which persists above room temperature, and a diamagnetic/paramagnetic phase below 60 K.
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Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

TL;DR: In this paper, a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures was conducted.
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Origin of the Two-Dimensional Electron Gas at LaAlO 3 /SrTiO 3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction

TL;DR: In this article, the electrical properties of amorphous and crystalline LaAlO/SrTiO heterostructures were compared and it was shown that the answer depends on the structure of the overlayer.
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Metal-insulator transition in SrTiO(3-x) thin films induced by frozen-out carriers.

TL;DR: The metal-insulator transition (MIT) observed in the SrTiO(3-x) film was found to be induced by the carrier freeze-out effect and its electrical properties were found that O(vac) in bulk SrTi olefins is far from uniform over the whole material.