M
M. J. Reed
Researcher at North Carolina State University
Publications - 19
Citations - 1282
M. J. Reed is an academic researcher from North Carolina State University. The author has contributed to research in topics: Ferromagnetism & Magnetic semiconductor. The author has an hindex of 10, co-authored 19 publications receiving 1256 citations.
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Journal ArticleDOI
Room temperature ferromagnetic properties of (Ga, Mn)N
M. L. Reed,Nadia A. El-Masry,Hans H. Stadelmaier,M. K. Ritums,M. J. Reed,C. A. Parker,John C. Roberts,Salah M. Bedair +7 more
TL;DR: In this paper, the Curie temperature of Mn-doped GaN films has been obtained by varying the growth and annealing conditions of the GaN and they have been shown to have ferromagnetic behavior with hysteresis curves showing a coercivity of 100−500 Oe.
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Determination of the critical layer thickness in the InGaN/GaN heterostructures
TL;DR: In this paper, the critical layer thickness was identified as the thickness where a transition occurs from the strained to unstrained condition, which is accompanied by the appearance of deep level emission and a drop in band edge photoluminescence intensity.
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Optical band gap dependence on composition and thickness of InxGa1−xN (0<x<0.25) grown on GaN
C. A. Parker,John C. Roberts,Salah M. Bedair,M. J. Reed,S. X. Liu,Nadia A. El-Masry,Lawrence H. Robins +6 more
TL;DR: In this article, band gap measurements have been carried out in strained and relaxed InxGa1−xN epilayers with x < 0.25 and the dependence of the band gap shift, ΔEg, on strain is presented.
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Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices
M. L. Reed,M. K. Ritums,Hans H. Stadelmaier,M. J. Reed,C. A. Parker,Salah M. Bedair,Nadia A. El-Masry +6 more
TL;DR: A new dilute magnetic semiconductor (Ga,Mn)N grown by metal organic chemical vapor deposition (MOCVD) is reported in this paper, where the direction of the easy axis and the Curie temperature varies with the growth conditions, the latter ranging from 38°C to 75°C Secondary ion mass spectroscopy (SIMS) confirms diffusion of Mn into the GaN to a depth of 380 A
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Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
TL;DR: In this article, the critical layer thickness of GaN/InxGa1−xN/GaN double heterostructures in the composition range 0