Journal ArticleDOI
Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
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TLDR
In this article, the critical layer thickness of GaN/InxGa1−xN/GaN double heterostructures in the composition range 0 <x<0.16 was investigated.Abstract:
We report on the critical layer thickness of GaN/InxGa1−xN/GaN double heterostructures in the composition range 0<x<0.16. The evolution of the photoluminescence spectra and the electrical properties of the InxGa1−xN well were monitored as its thickness was increased for a given % InN. Due to compressive stress and possible quantum-size effects, the emission energy from thin InGaN wells is blueshifted relative to thicker wells of a given % InN. The transition from the blueshifted emission of strained InGaN to redshifted emission of relaxed InGaN is also accompanied by dramatic changes in film conductivity and mobility. The thickness at which the onset of relaxation occurs is deemed the critical layer thickness of the InxGa1−xN film.read more
Citations
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InGaN-GaN multiquantum-well blue and green light-emitting diodes
TL;DR: In this paper, the InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminecence (EL) measurements.
Journal ArticleDOI
Critical thickness calculations for InGaN/GaN
TL;DR: In this paper, a model based on the overall energy balance was used to calculate the critical thickness for an InGaN epitaxial layer on a GaN substrate, which was found to be lower than values predicted by models proposed by Fischer or People and Bean.
Journal ArticleDOI
The critical thickness of InGaN on (0 0 0 1)GaN
TL;DR: The critical thickness for the relaxation of InGaN layers grown on sapphire for an indium content between 10% and 20% has been determined experimentally as mentioned in this paper, which is consistent with absorption and photoluminescence measurements.
Journal ArticleDOI
Equilibrium critical thickness for misfit dislocations in III-nitrides
David Holec,Y. Zhang,D.V. Sridhara Rao,Menno J. Kappers,Clifford McAleese,Colin J. Humphreys +5 more
TL;DR: In this paper, the effect of the dislocation core energy on equilibrium critical thickness values for III-nitrides is investigated theoretically and is shown to be significant, compared with experimentally determined values of the critical thickness for misfit dislocations in the InGaN/GaN system using transmission electron microscopy and xray diffraction techniques.
Journal ArticleDOI
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
Jesús Zúñiga-Pérez,Vincent Consonni,Liverios Lymperakis,Xiang Kong,Achim Trampert,Sergio Fernández-Garrido,Oliver Brandt,Hubert Renevier,Stacia Keller,Karine Hestroffer,Markus R. Wagner,Juan Sebastián Reparaz,Fatih Akyol,Siddharth Rajan,Stephanie Rennesson,Tomas Palacios,Guy Feuillet +16 more
TL;DR: In this paper, a review of polarity-related issues in GaN and ZnO is presented, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth.
References
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Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
TL;DR: In this paper, high-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.
Journal ArticleDOI
Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
P. J. Orders,Brian F. Usher +1 more
TL;DR: In this paper, the critical thickness hc of strained InxGa1−xAs layers grown by molecular beam epitaxy on GaAs(100) substrates was determined by double-crystal x-ray diffraction for 0.07≤x≤0.25.
Journal ArticleDOI
Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy
TL;DR: In this paper, the critical layer thickness for InxGa1−xAs layers in single strained quantum wells (SSQWs) and strained layer superlattices (SLSs) were investigated using photoluminescence microscopy images and x-ray rocking curves for two series of SSQW and SLS structures corresponding to many different layer thicknesses.
Journal ArticleDOI
Determination of the critical layer thickness in the InGaN/GaN heterostructures
TL;DR: In this paper, the critical layer thickness was identified as the thickness where a transition occurs from the strained to unstrained condition, which is accompanied by the appearance of deep level emission and a drop in band edge photoluminescence intensity.
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