M
M.L. Lovejoy
Researcher at Motorola
Publications - 1
Citations - 194
M.L. Lovejoy is an academic researcher from Motorola. The author has contributed to research in topics: Polysilicon depletion effect & Fermi level. The author has an hindex of 1, co-authored 1 publications receiving 193 citations.
Papers
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Journal ArticleDOI
Fermi-level pinning at the polysilicon/metal-oxide interface-Part II
Christopher C. Hobbs,L. R. C. Fonseca,A. Knizhnik,V. Dhandapani,S. Samavedam,William J. Taylor,J. M. Grant,L. Dip,D. Triyoso,Rama I. Hegde,David C. Gilmer,R. Garcia,D. Roan,M.L. Lovejoy,Raghaw S. Rai,E. A. Hebert,Hsing-Huang Tseng,S.G.H. Anderson,Bruce E. White,Philip J. Tobin +19 more
TL;DR: In this article, it was shown that Fermi-pinning at the polysilicon/metal-oxide interface causes high threshold voltages in MOSFET devices.