R
Raghaw S. Rai
Researcher at Motorola
Publications - 20
Citations - 827
Raghaw S. Rai is an academic researcher from Motorola. The author has contributed to research in topics: Leakage (electronics) & Gate dielectric. The author has an hindex of 9, co-authored 20 publications receiving 797 citations.
Papers
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Journal ArticleDOI
Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
Maciej Gutowski,John E. Jaffe,Chun-Li Liu,Matthew W. Stoker,Rama I. Hegde,Raghaw S. Rai,Philip J. Tobin +6 more
TL;DR: In this paper, theoretical and experimental results regarding the thermodynamic stability of high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2 were presented.
Journal ArticleDOI
Fermi-level pinning at the polysilicon/metal-oxide interface-Part II
Christopher C. Hobbs,L. R. C. Fonseca,A. Knizhnik,V. Dhandapani,S. Samavedam,William J. Taylor,J. M. Grant,L. Dip,D. Triyoso,Rama I. Hegde,David C. Gilmer,R. Garcia,D. Roan,M.L. Lovejoy,Raghaw S. Rai,E. A. Hebert,Hsing-Huang Tseng,S.G.H. Anderson,Bruce E. White,Philip J. Tobin +19 more
TL;DR: In this article, it was shown that Fermi-pinning at the polysilicon/metal-oxide interface causes high threshold voltages in MOSFET devices.
Journal ArticleDOI
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
David Gilmer,Rama I. Hegde,R. Cotton,R. Garcia,V. Dhandapani,Dina H. Triyoso,D. Roan,A. Franke,Raghaw S. Rai,L. Prabhu,Chris Hobbs,John M. Grant,L. B. La,Srikanth B. Samavedam,B. Taylor,Hsing-Huang Tseng,Philip J. Tobin +16 more
TL;DR: In this paper, the same authors reported that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto HfO2 results in electrical properties much worse compared to similar Hf O2 films using platinum metal gates.
Journal ArticleDOI
Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO 2 and HfO 2 in Contact with Si and SiO2
Maciej Gutowski,John E. Jaffe,Chun-Li Liu,Matthew W. Stoker,Rama I. Hegde,Raghaw S. Rai,Philip J. Tobin +6 more
TL;DR: In this article, the thermodynamic stability of high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2 was investigated and shown to be stable with respect to formation of silicides.
Journal ArticleDOI
Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics
Kaupo Kukli,Mikko Ritala,Markku Leskelä,Timo Sajavaara,Juhani Keinonen,David C. Gilmer,Rama I. Hegde,Raghaw S. Rai,L. Prabhu +8 more
TL;DR: In this article, 4-6-nm thick hafnium oxide films were grown by atomic layer deposition from HfI4 or HfCl4 and H2O on SiO2/Si(1 0 0) substrates at 300 °C.