M
M. Laurens
Researcher at STMicroelectronics
Publications - 16
Citations - 255
M. Laurens is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Heterojunction bipolar transistor & BiCMOS. The author has an hindex of 7, co-authored 16 publications receiving 252 citations.
Papers
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Journal ArticleDOI
A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters
S. Jouan,R. Planche,H. Baudry,P. Ribot,J. A. Chroboczek,Didier Dutartre,Daniel Gloria,M. Laurens,P. Llinares,Michel Marty,A. Monroy,C. Morin,R. Pantel,A. Perrotin,J. de Pontcharro,J.L. Regolini,G. Vincent,Alain Chantre +17 more
TL;DR: A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) with epitaxially aligned polysilicon emitters is described in this paper.
Proceedings ArticleDOI
High performance 0.25 /spl mu/m SiGe and SiGe:C HBTs using non selective epitaxy
H. Baudry,B. Martinet,C. Fellous,O. Kermarrec,Y. Campidelli,M. Laurens,Michel Marty,J. Mourier,G. Troillard,A. Monroy,Didier Dutartre,D. Bensahel,G. Vincent,Alain Chantre +13 more
TL;DR: In this paper, a robust 0.25 /spl mu/m double-poly SiGe HBT structure using non-selective epitaxy has been developed, which can achieve performance up to 120/100 GHz f/sub T/f/sub max/ with pure SiGe base transistors.
Proceedings ArticleDOI
High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges
Pascal Chevalier,B. Barbalat,M. Laurens,B. Vandelle,L. Rubaldo,B. Geynet,Sorin P. Voinigescu,Timothy O. Dickson,Nicolas Zerounian,S. Chouteau,Didier Dutartre,A. Monroy,Frédéric Aniel,Gilles Dambrine,Alain Chantre +14 more
TL;DR: Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits at STMicroelectronics.
Proceedings ArticleDOI
230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
Pascal Chevalier,C. Fellous,L. Rubaldo,Didier Dutartre,M. Laurens,T. Jagueneau,Francois Leverd,S. Bord,C. Richard,Damien Lenoble,J. Bonnouvrier,Michel Marty,A. Perrotin,Daniel Gloria,F. Saguin,B. Barbalat,R. Beerkens,Nicolas Zerounian,Frédéric Aniel,Alain Chantre +19 more
TL;DR: In this article, a 230 GHz self-aligned SiGeC HBT with a selective epitaxial base and an arsenic-doped monocrystalline emitter is described.
Proceedings ArticleDOI
A high performance low complexity SiGe HBT for BiCMOS integration
A. Chantre,Michel Marty,J.L. Regolini,M. Mouis,J. de Pontcharra,Didier Dutartre,C. Morin,Daniel Gloria,S. Jouan,Roland Pantel,M. Laurens,A. Monroy +11 more
TL;DR: In this paper, a low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described.