M
M. Matloubian
Researcher at Conexant
Publications - 9
Citations - 287
M. Matloubian is an academic researcher from Conexant. The author has contributed to research in topics: Noise (electronics) & Flicker noise. The author has an hindex of 6, co-authored 9 publications receiving 279 citations.
Papers
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Journal ArticleDOI
Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
TL;DR: In this paper, an extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise and their cross correlation in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements.
Journal ArticleDOI
High-frequency small signal AC and noise modeling of MOSFETs for RF IC design
TL;DR: In this paper, a subcircuit RF model incorporating the HF effects of parasitics is presented, which is compared with the measured data for both y parameter and f/sub T/ characteristics.
Proceedings ArticleDOI
RF modeling issues of deep-submicron MOSFETs for circuit design
TL;DR: This paper provides an overview of important issues in CMOS MOSFET modeling for radio frequency (RF) applications and discusses modeling issues that need to be resolved to meet the requirements from circuit designers.
Proceedings ArticleDOI
Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements
TL;DR: In this paper, an extraction method to obtain the induced gate noise, channel thermal noise and their cross-correlation in submicron MOSFETs directly from scattering and RF noise parameter measurements is presented and experimentally verified.
Proceedings ArticleDOI
MOSFET modeling for RF circuit design
TL;DR: In this article, a simple sub-circuit model is presented with comparisons of the data for both y parameter and f/sub T/ characteristics, and the results of different noise modeling approaches are also given with the comparison of the measured data, with which the prediction capability of the HF noise behavior of any modeling approach can be examined.