M. S. Dresselhaus

TL;DR: Extrema was observed in the film thickness d dependence of various thermoelectric parameters (Seebeck coefficient S, electrical conductivity σ, Hall coefficient RH, charge carrier mobility μ, and power factor P) of epitaxial PbTe/(001) KCl thin films prepared by thermal evaporation in vacuum and protected from oxidation by an EuS layer.

TL;DR: In this article, an oscillatory dependences of the galvanomagnetic and thermoelectric properties on the IV-VI layer thickness d were observed at room temperature for epitaxial thin films grown by thermal evaporation on KCl (0 0 1) substrates and covered with a EuS protective layer.

TL;DR: The dependence of the Seebeck coefficient S on the thickness of SnTe thin films grown by thermal evaporation in vacuum on (001)KCl substrates were obtained at room temperature as mentioned in this paper.

TL;DR: In this paper, the dependence of the elastic stress in a growing layer (either PbTe or SnTe) on the layer thickness and the critical thickness are in good agreement with those calculated theoretically.

TL;DR: In this article, the effect of oxidation at room temperature on the thermoelectric properties of PbSe/KCl (001) thin films prepared by thermal evaporation was investigated.