M
M. Schadt
Researcher at University of Erlangen-Nuremberg
Publications - 8
Citations - 429
M. Schadt is an academic researcher from University of Erlangen-Nuremberg. The author has contributed to research in topics: Electron mobility & Silicon carbide. The author has an hindex of 7, co-authored 8 publications receiving 422 citations.
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Journal ArticleDOI
Doping of SiC by Implantation of Boron and Aluminum
TL;DR: In this article, aluminum and boron implantation in 4H/6H SiC was investigated, and the degree of electrical activity of implanted Al/B atoms was determined as a function of the annealing temperature.
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Chemical vapor deposition and characterization of undoped and nitrogen‐doped single crystalline 6H‐SiC
S. Karmann,W. Suttrop,Adolf Schöner,M. Schadt,C. Haberstroh,F. Engelbrecht,Reinhard Helbig,Gerhard Pensl,R. A. Stein,S. Leibenzeder +9 more
TL;DR: In this article, the authors reported CVD growth at 1600°C in the hydrogen-silane-propane gas system with nitrogen as a dopant and achieved high quality films with growth rates of about 1.8 μm per hour.
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Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC
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Theory of the electron mobility in n-type 6H-SiC
TL;DR: In this article, the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC was calculated based on the conduction band structure determined by a first-principle calculation.
Journal ArticleDOI
CVD growth and characterization of single-crystalline 6H silicon carbide
S. Karmann,C. Haberstroh,F. Engelbrecht,W. Suttrop,A. Schöner,M. Schadt,Reinhard Helbig,Gerhard Pensl,R. A. Stein,S. Leibenzeder +9 more
TL;DR: In this article, the influence of growth parameters, temperature and gas concentrations on the growth rate of 6H-SiC layers is discussed, and the films are examined by structural, optical and electrical characterization techniques.