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Maria C. Asensio

Researcher at Spanish National Research Council

Publications -  170
Citations -  9031

Maria C. Asensio is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Graphene & Angle-resolved photoemission spectroscopy. The author has an hindex of 40, co-authored 163 publications receiving 7651 citations. Previous affiliations of Maria C. Asensio include Autonomous University of Madrid & Complutense University of Madrid.

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Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

TL;DR: Here it is provided compelling evidence, from both structural and electronic properties, for the synthesis of epitaxial silicene sheets on a silver substrate, through the combination of scanning tunneling microscopy and angular-resolved photoemission spectroscopy in conjunction with calculations based on density functional theory.
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Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

TL;DR: It is shown that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene, however, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed.
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Towards high quality CVD graphene growth and transfer

TL;DR: In this paper, Bilayer-free monolayer graphene was obtained by a careful pre-annealing step and by optimizing the H2 flow during growth, and as-grown graphene was transferred using an improved wet chemical graphene transfer process.
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Evidence of Dirac fermions in multilayer silicene

TL;DR: In this paper, the authors measured a cone-like dispersion at the Brillouin zone center due to band folding in multilayer silicene, and showed that the π* and π states meet at ∼ 0.25ÕeV below the Fermi level.
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Quasicrystalline 30° twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling.

TL;DR: This work reports the successful growth of quasicrystalline 30° twisted bilayer graphene (30°-tBLG), which is stabilized by the Pt(111) substrate, and reveals its electronic structure, thereby extending band structure engineering to incommensurate superstructures.