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Martin Hÿtch

Researcher at University of Toulouse

Publications -  44
Citations -  723

Martin Hÿtch is an academic researcher from University of Toulouse. The author has contributed to research in topics: Electron holography & Holography. The author has an hindex of 15, co-authored 44 publications receiving 639 citations. Previous affiliations of Martin Hÿtch include University of Paris & Centre national de la recherche scientifique.

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Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps.

TL;DR: This work investigates edge dislocations in ferroelectric BiFeO3 by means of spherical aberration-corrected scanning transmission electron microscopy, a dedicated model-based structure analysis, and phase field simulations, and an atomic model for the dislocation core is derived.
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Dark-field electron holography for the measurement of geometric phase.

TL;DR: The genesis, theoretical basis and practical application of the new electron holographic dark-field technique for mapping strain in nanostructures are presented and the development places geometric phase within a unified theoretical framework for phase measurements by electron holography.
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Evidence of Sharp and Diffuse Domain Walls in BiFeO 3 by Means of Unit-Cell-Wise Strain and Polarization Maps Obtained with High Resolution Scanning Transmission Electron Microscopy

TL;DR: By measuring simultaneously local polarization and strain, this work provides direct experimental proof for the straight DW structure predicted by ab initio calculations as well as the recently proposed theory of diffuse DWs, thus resolving a long-standing discrepancy between experimentally measured and theoretically predicted DW mobilities.
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Counting elementary charges on nanoparticles by electron holography.

TL;DR: This work shows that aberration-corrected electron holography is capable of counting the charge on individual nanoparticles to a precision of one elementary unit of charge, and presents a method that measures charges within predefined contours by directly applying Gauss's law at the nanoscale.
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Quantitative analysis of strain field in thin films from HRTEM micrographs

TL;DR: In this article, a method for measuring and mapping displacement fields and strain fields was developed based on the Fourier analysis of a HRTEM lattice image selecting a strong Bragg reflection and performing an inverse Fourier transform.